1.

Conference Proceedings
Conference Proceedings
1. Growth of GaN Thin Films on Sapphire Substrate by Low-Pressure MOCVD
Ishida, M. ; Hashimoto, T. ; Takayama, T. ; Imafuji, O. ; Yuri, M. ; Yoshikawa, A. ; Itoh, K. ; Terakoshi, Y. ; Sugino, T. ; Shirafuji, J.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.69-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
2.

Conference Proceedings
Conference Proceedings
2. Vapor Phase Epitaxy of GaN Using Gallium Tri-Chloride and Ammonia
Yuri, M. ; Ueda, T. ; Lee, H. ; Itoh, K. ; Baba, T. ; Harris, J. S., Jr.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.195-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
3.

Technical Paper
Technical Paper
3. Measurement and Analysis of an Efficient Turbine Rotor Pump Work Reduction System Incorporating Pre-Swirl Nozzles and a Free Pressure Augmentation Chamber.
Laurello, V. ; Yuri, M. ; Fujii, K. ; Ishizaka, K. ; Nakamura, T.
Pub. info.: A.S.M.E. paper.  2004.  New York, NY.  American Society of Mechanical Engineers
Title of ser.: ASME Technical Paper : GT
Ser. no.: 2004
4.

Conference Proceedings
Conference Proceedings
4. 100-mW high-power three-section tunable distributed Bragg reflector laser diodes with a real refractive-index-guided self-aligned structure
Takayama, T. ; Mochida, A. ; Orita, K. ; Tamura, S. ; Ohnishi, T. ; Yuri, M. ; Shimizu, H.
Pub. info.: Novel In-Plane Semiconductor Lasers.  pp.49-58,  2002.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4651