1.

Conference Proceedings
Conference Proceedings
1. Donor-Like Deep Level Defects in GaN Characterized by Double-Correlation Deep Level Transient Spectroscopy
Ahoujja, Mo ; Hogsed, M. ; Yeo, Y. K. ; Hengehold, R. L.
Pub. info.: GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A..  pp.619-624,  2006.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 892
2.

Conference Proceedings
Conference Proceedings
2. IR RADIATION TRANSIENT ANNEALING OF SILICON IMPLANTED SI GALIUM ARSENIDE
Ezis, A. ; Yeo, Y. K. ; Park, Y. S.
Pub. info.: Energy beam-solid interactions and transient thermal processing : symposium held November 1983 in Boston, Massachusetts, U.S.A..  pp.681-686,  1984.  New York.  North-Holland
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 23
3.

Conference Proceedings
Conference Proceedings
3. Annealing studies of Er-implanted GaAs and the excitation mechanism of Er in GaAs
Elsaesser, D. W. ; Colon, J. E. ; Yeo, Y. K. ; Hengehold, R. L. ; Pomrenke, G. S.
Pub. info.: Rare earth doped semiconductors : symposium held April 13-15, 1993, San Francisco, California, U.S.A..  pp.251-,  1993.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 301
4.

Conference Proceedings
Conference Proceedings
4. Neodymium and Erbium Implanted GaN
Silkowski, E. ; Yeo, Y. K. ; Hengehold, R. L. ; Goldenberg, B. ; Pomrenke, G. S.
Pub. info.: Rare earth doped semiconductors II : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.69-,  1996.  Pittsburgh.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 422
5.

Conference Proceedings
Conference Proceedings
5. Annealing Study of Ion Implated MOCVD and MBE Grown GaN
Silkowski, E. ; Yeo, Y. K. ; Hengehold, R. L. ; Khan, M. A. ; Lei, T. ; Evans, K. ; Cerny, C.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.813-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
6.

Conference Proceedings
Conference Proceedings
6. Defect Dominant Junction Characteristics of 4H-SiC p+/n Diodes
Scofield, J. ; Dunn, M. ; Reinhardt, K. ; Yeo, Y. K. ; Hengehold, R.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.57-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
7.

Conference Proceedings
Conference Proceedings
7. Electrical Characterization of Defects Introduced in 4H-SiC During High Energy Proton Irradiation and Their Annealing Behavior
Ahoujja, M. ; Crocket, H. C. ; Scott, M. B. ; Yeo, Y. K. ; Hengehold, R. L.
Pub. info.: New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A..  pp.203-208,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 764
8.

Conference Proceedings
Conference Proceedings
8. Electrical Characterization of As- and [As+Si]-Doped GaN Grown by Metalorganic Chemical Vapor Deposition
Ahoujja, M. ; Elhamri, S. ; Berney, R. ; Yeo, Y. K. ; Hengehold, R. L.
Pub. info.: GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A..  pp.161-166,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 831