1.

Conference Proceedings
Conference Proceedings
1. PVT-Growth and Characterization of Single Crystalline 3C-SiC on a (0001) 6H-SiC Substrate
Polychroniadis, E. K. ; Mantzari, A. ; Freudenberg, A. ; Wollweber, J. ; Nitschke, R. ; Frank, T. ; Pensl, G. ; Schoner, A.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.319-322,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
2.

Conference Proceedings
Conference Proceedings
2. Source Material Related Distribution of Defects in 6H-SiC Single Crystals
Rost, H.-J ; Siche, D. ; Dolle, J. ; Schulz, D. ; Wollweber, J.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.263-266,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
3.

Conference Proceedings
Conference Proceedings
3. Morphology of Sublimation Grown 6H-SiC(000-1) Surfaces
Schulz, D. ; Dolle, J. ; Rost, H.-J ; Siche, D. ; Wollweber, J.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.243-246,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
4.

Conference Proceedings
Conference Proceedings
4. Study of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVT
Schulz, D. ; Irmscher, K. ; Dolle, J. ; Eiserbeck, W. ; Muller, T. ; Rost, H. -J. ; Siche, D. ; Wagner, G. ; Wollweber, J.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.87-90,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
5.

Conference Proceedings
Conference Proceedings
5. Investigation of Silicon Carbide Physical Vapor Transport Growth on the C-Terminated Face of 6H Seeds
Schulz, D. ; Doerschel, J. ; Irmscher, K. ; Rost, H.-J. ; Siche, D. ; Wollweber, J.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
6.

Conference Proceedings
Conference Proceedings
6. Growth of 3C SiC Single Crystals from Convection Dominated Melts
Wollweber, J. ; Chevrier, V. ; Siche, D. ; Duffar, Th.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.119-124,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
7.

Conference Proceedings
Conference Proceedings
7. Model for Macroscopic Slits in 6H- and 4H-SiC Single Crystals
Wollweber, J. ; Rost, H.-J. ; Schulz, D. ; Siche, D.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.63-66,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. Macrodefect Generation in SiC Single Crystals Caused by Polytype Changes
Rost, H.-J. ; Doerschel, J. ; Schulz, D. ; Siche, D. ; Wollweber, J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.67-70,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. Stable Parameter Range for 3C-SiC Sublimation Growth on Graphite
Wollweber, J. ; Mantzari, A. ; Polychroniadis, E.K. ; Balloud, C. ; Freudenberg, A. ; Nitschke, R. ; Camassel, J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.143-146,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
10.

Conference Proceedings
Conference Proceedings
10. Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport
Rost, H.-J. ; Irmscher, K. ; Doerschel, J. ; Siche, D. ; Schulz, D. ; Wollweber, J.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.91-94,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436