1.

Conference Proceedings
Conference Proceedings
1. Behaviour of Boron After Implantation into Silicon-Schottky Diodes:A β-NMR Study on the Fermi-Level Dependence
Frank,H.-P. ; Diehl,E. ; Ergezinger,K.-H. ; Fischer,B. ; Ittermann,B. ; Mai,F. ; Marbach,K. ; Weißenmayer,S. ; Welker,G. ; Ackermann,H. ; Stockman,H.-J.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.135-140,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
2.

Conference Proceedings
Conference Proceedings
2. Donor doping of ZnSe:lattice location aud annealing behaviour of implanted boron
Itterrnann,B. ; Welker,G. ; Kroll,F. ; Mai,F. ; Marbach,K. ; Ackermann,H. ; Stockmann,H.-J. ; Oldckop,E. ; Zeitz,W.-D.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part3  pp.1389-1395,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
3.

Conference Proceedings
Conference Proceedings
3. βNMR of nonsubstitutional 12B after implantation into p-type silicon
Fischer,B. ; Seelinger,W. ; Diehl,E. ; Ergezinger,K.-H. ; Frank,H.-P. ; Ittermann,B. ; Mai,F. ; Welker,G. ; Ackermann,H. ; Stockmann,H.-J.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.1  pp.269-272,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87