1.

Conference Proceedings
Conference Proceedings
1. The Effect of Delay Between Dry Etch and Wet Clean Processing Steps on Cleaning of Post-Etch Residues
D. Hellin ; I.J. Vos ; G. Vereecke ; E. Pavel ; W. Boullart
Pub. info.: Cleaning and surface conditioning technology in semiconductor device manufacturing 10.  pp.283-290,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(2)
2.

Conference Proceedings
Conference Proceedings
2. In-situ Spatial Analysis of RF Voltage during Plasma Etching
A.P. Milenin ; J.-F. de Marneffe ; H. Struyf ; W. Boullart
Pub. info.: Plasma Processing 17.  pp.17-22,  2008.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 13(8)
3.

Conference Proceedings
Conference Proceedings
3. Reactive Ion Etch of Si3N4 Spacers High Selective to Germanium
E. Altamirano ; E. Kunnen ; B. De Jaeger ; W. Boullart
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.147-152,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)
4.

Conference Proceedings
Conference Proceedings
4. Influenece of Ta(N) Metal Gate Microstructure on Its Etch Properties
D. Shamiryan ; V. Paraschiv ; Z. Tokei ; W. Boullart
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.625-632,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
5.

Conference Proceedings
Conference Proceedings
5. EFFICIENT CLEANING OF LOW-к MATERIALS USING SINGLE-WAFER CLEANING SOLUTION: A COMPATIBILITY STUDY AND ELECTRICAL CHARACTERIZATION
Q. T. Le ; J. Van Olmen ; R. Vanderheyden ; E. Kesters ; K. Kenis ; T. Conard ; W. Boullart ; M. R. Baklanov ; S. Vanhaelemeersch
Pub. info.: Cleaning Technology in Semiconductor Device Manufacturing IX.  pp.164-171,  2006.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(3)
6.

Conference Proceedings
Conference Proceedings
6. EVALUATION OF THE DEGREE OF DAMAGE AFTER DIFFERENT CONDICTIONS OF He/H₂ STRIP PLASMA ON SILICA-BASED POROUS LOW-к MATERIALS - COMPATIBILITY STUDY WITH CHEMICAL SOLUTIONS
E. Kesters ; Q. T. Le ; W. Boullart ; Q. Han ; I. Berry ; C. Waldfried ; P. W. Mertens ; M. M. Heyns
Pub. info.: Cleaning Technology in Semiconductor Device Manufacturing IX.  pp.319-326,  2006.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(3)
7.

Conference Proceedings
Conference Proceedings
7. A novel plasma-assisted shrink process to enlarge process windows of narrow trenches and contacts for 45-nm node applications and beyond
M. O. de Beeck ; J. Versluijs ; Z. Tokei ; S. Demuynck ; J. D. Marneffe ; W. Boullart ; S. Vanhaelemeersch ; H. Zhu ; P. Cirigliano ; E. Pavel ; R. Sadjadi ; J. Kim
Pub. info.: Advances in resist materials and processing technology XXIV.  2007.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6519
8.

Conference Proceedings
Conference Proceedings
8. Effect of quartz window temperature on plasma composition during STI etch
E. V. Danilkin ; D. Shamiryan ; M. R. Baklanov ; A. P. Milenin ; W. Boullart
Pub. info.: Micro- and nanoelectronics 2007 : 1-5 October 2007, Zvenigorod, Russia.  pp.70250E-1-70250E-10,  2008.  Bellingham, Wash..  Society of Photo-optical Instrumentation Engineers
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 7025