1.

Conference Proceedings
Conference Proceedings
1. Computer simulation and RBS/C studies of high-dose N+ and Al- co-implantation in 6H-SiC
Kharlamov,V.S. ; Kulikov,D.V. ; Trushin,Yu.V. ; Tsigankov,D.N. ; Yankov,R.A. ; Voelskow,M. ; Skorupa,W. ; Pezoldt,J.
Pub. info.: International Workshop on New Approaches to High-Tech Materials, Nondestructive Testing and Computer Simulations in Materials Science and Engineering : 9-13 June 1997, St. Petersburg, Russia.  pp.260-263,  1998.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3345
2.

Conference Proceedings
Conference Proceedings
2. Photothermal measurements of Al+-and Al+/N+-implanted 6H-SiC
Pezoldt,J. ; Teichert,G. ; Panknin,D. ; Voelskow,M.
Pub. info.: Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering : 7-11 June 1999, St. Petersburg, Russia.  pp.276-280,  2000.  Bellingham, Wash., USA.  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4064
3.

Conference Proceedings
Conference Proceedings
3. Ion Beam Synthesis:A Novel Method of Producing(SiC)1-x(AlN)x Layers
Yankov,R.A. ; Fukarek,W. ; Voelskow,M. ; Pezoldt,J. ; Skorupa,W.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.753-756,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
4.

Conference Proceedings
Conference Proceedings
4. Investigation of Ion-Implantation Induced Damage in 6H-SiC by RBS/C and PAS
Wirth,H. ; Anwand,W. ; Brauer,G. ; Voelskow,M. ; Pankuin,D. ; Skorupa,W. ; Coleman,P.G.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.729-732,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
5.

Conference Proceedings
Conference Proceedings
5. A Computational Model for the Formation of(SiC)1-x(AlN)x Structures by Hot,High-Dose N+ and Al+ Co-Implants in 6H-SiC
Truschin,Yu.V. ; Yankov,R.A. ; Kharlamov,V.S. ; Kulikov,D.V. ; Tsigankov,D.N. ; Kreissig,U. ; Voelskow,M. ; Pezoldt,J. ; Skorupa,W.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.757-760,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268