1.

Conference Proceedings
Conference Proceedings
1. Influenece of Ta(N) Metal Gate Microstructure on Its Etch Properties
D. Shamiryan ; V. Paraschiv ; Z. Tokei ; W. Boullart
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.625-632,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
2.

Conference Proceedings
Conference Proceedings
2. Wet Etch Characteristics of Hafnium Silicate Layers
M. Claes ; V. Paraschiv ; D. Dictus ; T. Conard ; W. Boullari ; S. Vanhaelemeersch ; S. De Gendt ; A. Delabie ; S. Van Elshoclst ; C. Zhao ; J. Everaert
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.633-644,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
3.

Conference Proceedings
Conference Proceedings
3. Metal/High-K Interface Interactions Upon High Temperature Annealing - Are They Cause of Workfunction Changes
T. Conard ; T. Schram ; A. Akheyar ; K. Arstila ; G. Zschaetzsch ; V. Paraschiv ; W. Vandervorst ; B. Brijs ; S. De Gendt ; Z. Jiang ; V. Kaushik ; J. Lenna ; L. Ragnarsson ; D. P. Brunco
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.159-170,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)