1.

Conference Proceedings
Conference Proceedings
1. CHARACTERISTICS OF MOCVD-GROWN A1GaAs/GaAs SQW LASERS AND GaAs MESFETs FABRICATION ON Si SUBSTRATE WITH SiO2-BACK COATING
Egawa, Takashi ; Tada, Hitoshi ; Kobayashi, Yasufumi ; Nozaki, Shinji ; Soga, Tetsuo ; Jimbo, Takashi ; Umeno, Masayoshi
Pub. info.: Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A..  pp.141-146,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 198
2.

Conference Proceedings
Conference Proceedings
2. MOCVD GROWTH OF III-V COMPOUNDS ON Si USING STRAINED SUPERLATTICES
Sakai, Shiro ; Soga, Tetsuo ; Takeyasu, Masanari ; Umeno, Masayoshi
Pub. info.: Heteroepitaxy on silicon : symposium held April 16-18, 1986, Palo Alto, California, U.S.A..  pp.15-28,  1986.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 67
3.

Conference Proceedings
Conference Proceedings
3. STRAIN-RELIEVED RELIABLE LASERS GROWN ON Si BY MOCVD
Egawa, Takashi ; Hasegawa, Yoshiaki ; Jimbo, Takashi ; Umeno, Masayoshi
Pub. info.: Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.357-362,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 281
4.

Conference Proceedings
Conference Proceedings
4. III-V Nitride Growth by Atmospheric-Pressure MOVPE with a Three-Layered Flow Channel
Uchida, Kazuo ; Tokunaga, Hiroki ; Inaishi, Yoshiaki ; Akutsu, Nakao ; Matsumoto, Koh ; Itoh, Tsuyoshi ; Egawa, Takashi ; Jimbo, Takashi ; Umeno, Masayoshi
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.129-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449