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18 results

Conference Proceedings

1. Double Gate 180V-128mA/mm SiC-MESFET for Power Switch Applications

Tournier, D. ; Vellvehi, M. ; Godignon, P. ; Jorda, X. ; Millan, J.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1243-1246, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. Current Sensing for SiC Power Devices

Tournier, D. ; Vellvehi, M. ; Godignon, P. ; Montserrat, J. ; Planson, D. ; Sarrus, F.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1215-1218, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

3. 4,5 kV-8 A SiC-Schottky Diodes / Si-IGBT Modules

Tournier, D. ; Waind, P. ; Godignon, P. ; Coulbeck, L. ; Millan, J. ; Bassett, R.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1163-1166, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

4. Process Optimisation for <11-2> 4H-SiC MOSFET Applications

Blanc, C. ; Tournier, D. ; Godignon, P. ; Brink, D.J. ; Souliere, V. ; Camassel, J.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1051-1054, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

5. Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET

Tournier, D. ; Godignon, P. ; Montserrat, J. ; Planson, D. ; Chante, J.P. ; Sarrus, F.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1403-1406, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

6. 4H-SiC MIS Structures Using Oxidized Ta2Si as High-k Dielectric

Perez-Tomas, A. ; Godignon, P. ; Mestres, N. ; Tournier, D. ; Montserrat, J. ; Millan, J.

Pub. info.:	Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A.. pp.211-216, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	815

Conference Proceedings

7. Simulation Study of a Novel Current-Limiting Device: A Vertical α-SiC JFET - Controlled Current Limiter

Tournier, D. ; Godignon, P. ; Planson, D. ; Chante, J.P. ; Sarrus, F.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1243-1246, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

8. Temperature Impact on High-Current 1.2kV SiC Schottky Rectifiers

Jorda, X. ; Tournier, D. ; Rebollo, J. ; Millan, J. ; Godignon, P.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.929-932, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

9. Temperature Dependence of 4H-SiC JBS and Schottky Diodes after High Temperature Treatment of Contact Metal

Perez, R. ; Mestres, N. ; Tournier, D. ; Jorda, X. ; Vellvehi, M. ; Godignon, P.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.945-948, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

10.

Conference Proceedings

10. 4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N2O

Perez-Tomas, A. ; Tournier, D. ; Godignon, P. ; Mestres, N. ; Millan, J.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.673-676, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

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Author: Tournier, D.