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15 results

Conference Proceedings

1. Fundamental Aspects of Effective Work Function Instability of Metal/Hf-based High-κ Gate Stacks

H. Watanabe ; S. Yoshida ; Y. Kita ; T. Hosoi ; T. Shimura

Pub. info.:	Physics and technology of high-k gate dielectrics 6. pp.27-38, 2008. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	16(5)

Conference Proceedings

2. AION/SiO₂ Stacked Gate Dielectrics for 4H-SiC MIS Devices

T. Hosoi ; M. Harada ; Y. Kagei ; Y. Watanabe ; T. Shimura

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.541-544, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

Conference Proceedings

3. Analysis of Lattice Distortion in Multicrystalline Silicon for Photovoltaic Cells by Synchrotron White X-Ray Microbeam Diffraction

T. Shimura ; T. Matsumiya ; N. Morimoto ; T. Hosoi ; K. Kajiwara

Pub. info.:	Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan. pp.153-156, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	725

Conference Proceedings

4. Oxidation Saturation of SiGe Alloy on Silicon-on-Insulator Wafers

T. Shimura ; M. Shimizu ; S. Horiuchi ; H. Watanabe ; K. Yasutake

Pub. info.:	SiGe and Ge, materials, processing, and devices. pp.1033-1037, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	3(7)

Conference Proceedings

5. Observation of Crystalline Imperfections in Supercritical Thickness Strained Silicon on Insulator Wafers by Synchrotron X-ray Topography

T. Shimura ; T. Inoue ; Y. Okamoto ; T. Hosoi ; H. Edo

Pub. info.:	SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. pp.539-543, 2008. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	16(10)

Conference Proceedings

6. Improvement of SiO₂/4H-SiC Interface Quality by Post-Oxidation Annealing in N₂ at High-Temperatures

A. Chanthaphan ; Y.H. Cheng ; T. Hosoi ; T. Shimura ; H. Watanabe

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.627-630, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

7. Impact of NO Annealing on Flatband Voltage Instability due to Charge Trapping in SiC MOS Devices

Y. Katsu ; T. Hosoi ; Y. Nanen ; T. Kimoto ; T. Shimura

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.599-602, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

8. Degradation of SiO₂/SiC Interface Properties due to Mobile Ions Intrinsically Generated by High-Temperature Hydrogen Annealing

A. Chanthaphan ; T. Hosoi ; Y. Nakano ; T. Nakamura ; T. Shimura

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.541-544, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

9. Application of Synchrotron X-ray Diffraction Methods to Gate Stacks of Advanced MOS Devices

T. Shimura ; T. Inoue ; Y. Okamoto ; T. Hosoi ; A. Ogura

Pub. info.:	Dielectrics for nanosystems 3: materials science, processing, reliability, and manufacturing. pp.75-82, 2008. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	13(2)

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Conference Proceedings

10. Retarded Oxide Growth on 4H-SiC(0001) Substrates due to Sacrificial Oxidation

T. Hosoi ; Y. Uenishi ; Y. Nakano ; T. Nakamura ; T. Shimura

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.562-565, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

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Author: T. Shimura