1.

Conference Proceedings
Conference Proceedings
1. Ni, Pt and Yb Based Fully Silicided (FUSI) Gates for Scaled CMOS Technologies
J. A. Kitti ; A. Lauwers ; M. van Dal ; H. Yu ; A. Veloso ; T. Hoffinann ; M. Pawlak ; C. Demeurisse ; S. Kubicek ; M. Niwa ; C. Vrancken ; P. Absil ; S. Bieseinans
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment.  pp.233-246,  2006.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(2)
2.

Conference Proceedings
Conference Proceedings
2. Ultra-Shallow Junctions Formed by Co-Implantation and Sub-Melt Laser Annealing
S. B. Felch ; A. Falepin ; S. Seven ; E. Augendre ; T. Noda ; V. Parihar ; F. Nouri ; T. Hoffinann ; B. Pawlak ; P. Eyben ; W. Vandervorst ; S. Thirupapuliyur ; R. Schreuelkamp ; E. Collart ; H. Graoui
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment.  pp.105-112,  2006.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(2)