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38 results

Conference Proceedings

1. Wettability of Basal and Prismatic Plane of Graphite by Molten Aluminum-Magnesium Alloy

M. Yoshida ; T. Matsunaga ; K. Ogata ; T. Hatayama ; K. Shinozaki

Pub. info.:	THERMEC 2006 : supplement to THERMEC 2006, 5th International conference on processing and manufacturing of advanced materials, July 4-8, 2006, Vancouver, Canad. 539-543 pp.877-882, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	539-543(1)

Conference Proceedings

2. Modification of SiO2/4H-SiC Interface Properties by High-Pressure H2O Vapor Annealing

D. Takeda ; H. Yano ; T. Hatayama ; Y. Uraoka ; T. Fuyuki

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.663-666, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

3. Sloped Sidewalls in 4H-SiC Mesa Structure Formed by a Cl2-O2 Thermal Etching

S. Takenami ; T. Hatayama ; H. Yano ; Y. Uraoka ; T. Fuyuki

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.733-736, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

4. Improved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl₃ Annealing

H. Yano ; T. Araoka ; T. Hatayama ; T. Fuyuki

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.727-732, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

5. Effect of Interfacial Localization of Phosphorus on Electrical Properties and Reliability of 4H-SiC MOS Devices

T. Akagi ; H. Yano ; T. Hatayama ; T. Fuyuki

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.695-698, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

6. Crystallization of Double-Layered Silicon Thin Films by Solid Green Laser Annealing and Its Application to Low Temperature poly-Si Thin Film Transistors

Y. Sugawara ; Y. Uraoka ; H. Yano ; T. Hatayama ; T. Fuyuki

Pub. info.:	Thin Film Transistor Technology 8. pp.173-178, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	3(8)

Conference Proceedings

7. Photoluminescence of 8H-SiC

A. Henry ; I.G. Ivanov ; E. Janzén ; T. Hatayama ; H. Yano

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.347-350, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

8. Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation

K. Yoshihara ; M. Kato ; M. Ichimura ; T. Hatayama ; T. Ohshima

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.373-376, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

9. Photoluminescence of 10H-SiC

A. Henry ; H. Yano ; T. Hatayama

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.269-273, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

10.

Conference Proceedings

10. Clearance of 4H-SiC Sub-Trench in Hot Chlorine Treatment

H. Koketsu ; T. Hatayama ; H. Yano ; T. Fuyuki

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.881-884, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

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Author: T. Hatayama