1.

Conference Proceedings
Conference Proceedings
1. Growth of Bulk GaN by Sublimation Method
Sakai,S. ; Sato,H. ; Sugahara,T. ; Naoi,Y. ; Kurai,S. ; Yamashita,K. ; Tottori,S. ; Hao,M. ; Wada,K. ; Nishino,K.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1107-1110,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
2.

Conference Proceedings
Conference Proceedings
2. Optical properties of InGaN grown by MOCVD on sapphire and on bulk GaN
Osinski,M. ; Eliseev,P.G. ; Lee,J. ; Smagley,V.A. ; Sugahara,T. ; Sakai,S.
Pub. info.: Design, fabrication, and characterization of photonic devices : 30 November-3 December 1999, Singapore.  pp.86-97,  1999.  Bellingham, Wash., USA.  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3896
3.

Conference Proceedings
Conference Proceedings
3. CPLgram:an advanced machine-readable OVD that is obtained by combining diffraction gratings and liquid crystals
Takeuchi,I. ; Yamamotoya,K. ; Sugahara,T. ; Hoshino,H. ; Matsumoto,H. ; Matsumoto,T.
Pub. info.: Optical security and counterfeit deterrence techniques III : 27-28 January 2000, San Jose, California.  pp.238-246,  2000.  Bellingham, Wash., USA.  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3973
4.

Conference Proceedings
Conference Proceedings
4. GaN Surface ablation by femtosecond pulses:atomic force microscopy studies and accumulation effects
Eliseev,P.G. ; Juodkazis,S. ; Sugahara,T. ; Sun,H.-B. ; Matsuo,S. ; sakai,S. ; Misawa,H.
Pub. info.: High-power laser ablation III, 24-28 April 2000, Santa Fe, USA.  pp.546-556,  2000.  Bellingham, Wash., USA.  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4065
5.

Conference Proceedings
Conference Proceedings
5. Stitching accuracy measurement system for EB direct writing and electron-beam projction lithography (EPL)
Tamura,T. ; Ema,T. ; Nozue,H. ; Sugahara,T. ; Sugano,A. ; Nitta,J.
Pub. info.: Emerging lithographic technologies V : 27 February-1 March, 2001, Santa Clara, [California], USA.  pp.704-714,  2001.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4343
6.

Conference Proceedings
Conference Proceedings
6. Luminescence,morphology,and x-ray diffraction features of InGaN materials grown on sapphire by metalorganic chemical vapor deposition
Li,P. ; Chua,S.J. ; Feng,Z.C. ; Wang,W. ; Hao,M.S. ; Sugahara,T. ; Sakai,S.
Pub. info.: Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures.  pp.63-72,  1999.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3899
7.

Conference Proceedings
Conference Proceedings
7. Laser-induced damage threshold and laser processing of GaN
Sun,H.-B. ; Juodkazis,S. ; Eliseev,P.G. ; Sugahara,T. ; Wang,T. ; Matsuo,S. ; Sakai,S. ; Misawa,H.
Pub. info.: High-Power Laser Ablation II.  pp.311-322,  2000.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3885
8.

Conference Proceedings
Conference Proceedings
8. Correlation between dislocations and luminescence in GaN
Hao,M. ; Sugahara,T. ; Tottori,s. ; Nozaki,M. ; Kurai,S. ; Nishino,K. ; Naoi,Y. ; Sakai,S.
Pub. info.: Optoelectronic Materials and Devices.  pp.138-145,  1998.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3419