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19 results

Conference Proceedings

1. DOSE EFFECTS IN Si FIB-MIXING OF SHORT PERIOD AlGaAs/GaAs SUPERLATTICES

Steckl, A. J. ; Chen, P. ; Choo, A. ; Jackson, H. ; Boyd, J. T. ; Pronko, P. P. ; Ezis, A. ; Kolbas, R. M.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.703-708, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

2. EXCITATION POWER DEPENDENCE OF PHOTOLUMINESCENCE IN CIB AND FIB IMPLANTED SUPERLATTICES

Choo, A. G. ; Jackson, H. E. ; Chen, P. ; Steckl, A. J. ; Cupta, V. ; Boyd, J. T.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.697-702, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

3. RAMAN CHARACTERIZATION OF AlGaAs SUPERLATTICE CHANNEL WAVEGUIDE STRUCTURE FORMED BY CIB AND FIB IMPLANTATION

Choo, A. G. ; Gupta, V. ; Jackson, H. E. ; Boyd, J. T. ; Steckl, A. J. ; Chen, P. ; Weiss, B. L. ; Burnham, R. D.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.691-696, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

4. BROAD AND FOCUSED ION BEAM Ga+ IMPLANTATION DAMAGE IN THE FABRICATION OF p+-nSi SHALLOW JUNCTIONS

Steckl, A. J. ; Lin, C-M. ; Patrizio, D. ; Rai, A. K. ; Pronko, P P..

Pub. info.:	Ion beam processing of advanced electronic materials : symposium held April 25-27, 1989, San Diego, California, U.S.A.. pp.161-168, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	147

Conference Proceedings

5. Visible Photoluminescence from Stain-etched Si Nanostructures

Xu, J. ; Mogul, H.C. ; Steckl, A. J.

Pub. info.:	Proceedings of the Second International Symposium on Quantum Confinement Physics and Applications. pp.231-239, 1994. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1994-17

Conference Proceedings

6. Comparison of the optical properties of Er3+ doped gallium nitride prepared by metalorganic molecular beam epitaxy (MOMBE) and solid source molecular beam epitaxy (SSMBE)

Hommerich, U. H. ; Seo, J. T. ; MacKenzie, J. D. ; Abernathy, C. R. ; Birkhahn, R. ; Steckl, A. J. ; Zavada, J. M.

Pub. info.:	GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.. pp.W11.65.1-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	595

Conference Proceedings

7. VACANCY INJECTION ENHANCED Al-Ga INTER-DIFFUSION IN Si FIB IMPLANTED SUPERLATTICE

Chen, P. ; Steckl, A. J.

Pub. info.:	Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A.. pp.37-, 1994. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	325

Conference Proceedings

8. Visible and Infrared Rare-Earth Activated Electroluminescence From Erbium Doped GaN

Garter, M. ; Birkhahn, R. ; Steckl, A. J. ; Scofield, J.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G11.3.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

9. Optical and Structural Properties of Er3+-Doped GaN Grown by MBE

Birkhahn, R. H. ; Hudgins, R. ; Lee, D. S. ; Lee, B. K. ; Steckl, A. J. ; Saleh, A. ; Wilson, R. G. ; Zavada, J. M.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G3.80.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

10.

Conference Proceedings

10. Focused Ion Beam Micromachining of GaN Photonic Devices

Chyr, I. ; Steckl, A. J.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G10.7.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

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Author: Steckl, A. J.