1.

Conference Proceedings
Conference Proceedings
1. Base Design for Pnp InAlAs-InGaAs Heterojunction Bipolar Transistors
Datta, S. ; Shi, S. ; Roeneker, K.P. ; Cahay, M. ; Stanchina, W.E.
Pub. info.: Proceedings of the twenty-sixth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVI).  pp.272-287,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-1
2.

Conference Proceedings
Conference Proceedings
2. THE USE OF LOW TEMPERATURE ALInAs AND GaInAs LATTICE MATCHED TO InP IN THE FABRICATION OF HBTs AND HEMTs
Metzger, R.A. ; Brown, A.S. ; Wilson, R.G. ; Liu, T. ; Stanchina, W.E. ; Nguyen, L.D. ; Schmitz, A.E. ; McCray, L.G. ; Henige, J.A.
Pub. info.: Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A..  pp.259-264,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 241
3.

Conference Proceedings
Conference Proceedings
3. Electron Distribution and Transit Time Through the Base of Abrupt Heterojunction Bipolar Transistors
Kumar, T. ; Cahay, M. ; Shi, S. ; Roenker, K.P. ; Stanchina, W.E. ; Osman, M.A.
Pub. info.: Proceedings of the Second International Symposium on Quantum Confinement Physics and Applications.  pp.341-355,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-17