1.

Conference Proceedings
Conference Proceedings
1. Electrical and Structural Properties of LT-GaAs: Influence of As/Ga Flux Ratio and Growth Temperature
Luysberg, M. ; Sohn, H. ; Prasad, A. ; Specht, P. ; Fujioka, H. ; Klockenbrink, R. ; Weber, E. R.
Pub. info.: Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.485-,  1997.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 442
2.

Conference Proceedings
Conference Proceedings
2. Thermal Stabilization of Nonstoichiometric GaAs Through Beryllium Doping
Lutz, R. C. ; Specht, P. ; Zhao, R. ; Jeong, S. ; Bokor, J. ; Weber, E. R.
Pub. info.: Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A..  pp.55-,  1998.  Warrendale, Pa.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 510
3.

Conference Proceedings
Conference Proceedings
3. Electrical Characterization of Beryllium Doped Low-Temperature MBE Grown GaAs
Cich, M. J. ; Zhao, R. ; Park, Y. ; Specht, P. ; Weber, E. R.
Pub. info.: Epitaxial growth - principles and applications : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.129-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 570
4.

Conference Proceedings
Conference Proceedings
4. Structural and Photoluminescence Studies of Er-Implanted LT-GaAs:Be
Maltez, R. L. ; Liliental-Weber, Z. ; Washburn, J. ; Behar, M. ; Klein, P. B. ; Specht, P. ; Weber, E. R.
Pub. info.: Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A..  pp.319-,  1998.  Warrendale, Pa.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 510