1.

Conference Proceedings
Conference Proceedings
1. Visible photoluminescence from Ge+-ion-implanted SiSxNy annealed under hydrostatic pressure
Tyschenko,I.E. ; Zhuravlev,K.S. ; Vandyshev,E.N. ; Misiuk,A. ; Yankov,R.A. ; Rebohle,L. ; Skorupa,W.
Pub. info.: International Conference on Solid State Crystals 2000 : Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, 9-13 October, 2000, Zakopane, Poland.  pp.237-241,  2000.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4413
2.

Conference Proceedings
Conference Proceedings
2. Strong violet light emission from Ge+-implanted SiO2 layers
Rebohle,L. ; Tyschenko,I.E. ; Borany,J.von ; Skorupa,W. ; Frob,H.
Pub. info.: Silicon-based optoelectronics : 27-28 January 1999, San Jose, California.  pp.155-162,  1999.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3630
3.

Conference Proceedings
Conference Proceedings
3. Theoretical and experimental studies of(AIN)1-x(SIC)x layer structures formed by N + and AI + coimplantation in 6H-SiC
Kulikov,D.V. ; Pezoldt,J. ; Rybin,P.V. ; Skorupa,W. ; Trushin,Yu.V. ; Yankov,R.A.
Pub. info.: International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering : 8-12 June 1998, St. Petersburg, Russia.  pp.254-257,  1999.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3687
4.

Conference Proceedings
Conference Proceedings
4. Computer simulation and RBS/C studies of high-dose N+ and Al- co-implantation in 6H-SiC
Kharlamov,V.S. ; Kulikov,D.V. ; Trushin,Yu.V. ; Tsigankov,D.N. ; Yankov,R.A. ; Voelskow,M. ; Skorupa,W. ; Pezoldt,J.
Pub. info.: International Workshop on New Approaches to High-Tech Materials, Nondestructive Testing and Computer Simulations in Materials Science and Engineering : 9-13 June 1997, St. Petersburg, Russia.  pp.260-263,  1998.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3345
5.

Conference Proceedings
Conference Proceedings
5. Ion Beam Synthesis:A Novel Method of Producing(SiC)1-x(AlN)x Layers
Yankov,R.A. ; Fukarek,W. ; Voelskow,M. ; Pezoldt,J. ; Skorupa,W.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.753-756,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
6.

Conference Proceedings
Conference Proceedings
6. Investigation of Ion-Implantation Induced Damage in 6H-SiC by RBS/C and PAS
Wirth,H. ; Anwand,W. ; Brauer,G. ; Voelskow,M. ; Pankuin,D. ; Skorupa,W. ; Coleman,P.G.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.729-732,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
7.

Conference Proceedings
Conference Proceedings
7. A Computational Model for the Formation of(SiC)1-x(AlN)x Structures by Hot,High-Dose N+ and Al+ Co-Implants in 6H-SiC
Truschin,Yu.V. ; Yankov,R.A. ; Kharlamov,V.S. ; Kulikov,D.V. ; Tsigankov,D.N. ; Kreissig,U. ; Voelskow,M. ; Pezoldt,J. ; Skorupa,W.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.757-760,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
8.

Conference Proceedings
Conference Proceedings
8. Raman scattering analysis of defects in 6H-SiC induced by ion implantation
Perez-Rodriguez,A. ; Gonzalez-Varona,O. ; Calvo-Barrio,L. ; Morante,J.R. ; Wirth,H. ; Panknin,D. ; Skorupa,W.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.727-732,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
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Conference Proceedings
Conference Proceedings
9. lon-beam-induced amorphization and recrystallization processes in SiC:Raman-scattering analysis
Perez-Rodriquez,A. ; Serre,C. ; Calvo-Barrio,L. ; Romano-Rodriquez,A. ; Morante,J.R. ; Pacaud,Y. ; Kogler,R. ; Skorupa,W.
Pub. info.: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics.  pp.481-494,  1995.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2648