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71 results

Conference Proceedings

1. Effect of the Crystallization Conditions on the Epitaxial Relationship of Si Deposited on 3C-SiC(100)

Ferro, G. ; Polychroniadis, E.K. ; Panknin, D. ; Skorupa, W. ; Stoemenos, J. ; Monteil, Y.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1563-1566, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. Growth Acceleration in FLASiC Assisted Short Time Liquid Phase Epitaxy by Melt Modification

Pezoldt, J. ; Morales, F.M. ; Stauden, T. ; Forster, C. ; Polychroniadis, E.K. ; Stoemenos, J. ; Panknin, D. ; Skorupa, W.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.295-298, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

3. High Dose High Temperature Ion Implantation of Ge into 4H-SiC

Kups, T. ; Weih, P. ; Voelskow, M. ; Skorupa, W. ; Pezoldt, J.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.851-854, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

4. Charge Trapping in High-Dose Ge-Implanted and Si- Implanted Silicon-Dioxide Thin Films

Nazarov, A.N. ; Osiyuk, I.N. ; Tyagulskii, I.P. ; Lysenko, V.S. ; Gebel, T. ; Skorupa, W.

Pub. info.:	Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium. pp.144-152, 2003. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-2

Conference Proceedings

5. FORMATION OF A BURIED STACKED INSULATOR BY ION BEAM SYNTHESIS

Skorupa, W. ; Grotzschel, R. ; Wollschlager, K. ; Albrecht, J. ; Vohse, H.

Pub. info.:	Phase formation and modification by beam-solid interactions : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A.. pp.127-132, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	235

Conference Proceedings

6. Ion Beam Synthesis of SiC on Insulator Structures

Serre, Ch. ; Perez-Rodriguez, A. ; Romano-Rodriguez, A. ; Morante, J.R. ; Estcve, J. ; Acero, M.C. ; Panknin, D. ; Koegler, R. ; Skorupa, W.

Pub. info.:	Silicon-on-Insulator Technology and Devices X : proceedings of the tenth International Symposium. pp.13-18, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-3

Conference Proceedings

7. FORMATION OF BURIED TERNARY SILICIDE LAYERS IN SILICON BY ION BEAM SYNTHESIS (IBS)

Panknin, D. ; Wieser, E. ; Skorupa, W. ; Querner, G. ; Vohse, H. ; Albrecht, J.

Pub. info.:	Beam-solid interactions : fundamentals and applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.. pp.111-116, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	279

Conference Proceedings

8. DOSE RATE DEPENDENCE OF THE ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION IN SILICON

Heera, V. ; Kogler, R. ; Skorupa, W. ; Grotzschel, R.

Pub. info.:	Beam-solid interactions : fundamentals and applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.. pp.273-278, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	279

Conference Proceedings

9. Conductive Tungsten-Based Layers Synthesized by Ion Implantation Into 6H-Silicon Carbide

Weishart, H. ; Schoneich, J. ; Voelskow, M. ; Skorupa, W.

Pub. info.:	Materials modification and synthesis by ion beam processing : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.. pp.283-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	438

10.

Conference Proceedings

10. Ion Implantation and Annealing Effects in Silicon Carbide

Heera, V. ; Skorupa, W.

Pub. info.:	Materials modification and synthesis by ion beam processing : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.. pp.241-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	438

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