1.

Conference Proceedings
Conference Proceedings
1. CHANNELING OF SHALLOW Si IMPLANTS INTO GaAs AS A FUNCTION OF TILT AND ROTATION ANGLES
Hovel, Harold J. ; McKoy, T. E. ; Mitchell, J. M. ; Scilla, G. ; Moore, S. J. ; Cardone, F.
Pub. info.: Advances in materials, processing, and devices in III-V compound semiconductors.  pp.439-444,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 144
2.

Conference Proceedings
Conference Proceedings
2. CARBON INCORPORATION IN METAL ORGANIC VAPOR PHASE EPITAXY GROWN GaAs USING CHYX1-Y, TMG, AND AsH3
Kuech, T.F. ; Buchan, N.I. ; Scilla, G. ; Cardone, F. ; Potemski, R.
Pub. info.: Chemical perspectives of microelectronic materials II : symposium held November 26-28, 1990, Boston, Massachusetts, U.S.A..  pp.171-176,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 204
3.

Conference Proceedings
Conference Proceedings
3. CHARACTERISTICS OF ARSENIC DOPED POLYCRYSTALLINE SILICON-GATE CAPACITORS AFTER RAPID THERMAL PROCESSING
Angelucci, R. ; Wong, C. Y. ; Sun, J. Y. -C ; Scilla, G. ; McFarland, P. A. ; Megdanis, A. C. ; Landi, E.
Pub. info.: Polysilicon films and interfaces : symposium held December 1-3, 1987, Boston, Massachusetts, U.S.A..  pp.285-292,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 106
4.

Conference Proceedings
Conference Proceedings
4. FORMATION OF SHALLOW BORON P+ JUNCTION USING Sb AMORPHIZATION
Ganin, E. ; Davari, B. ; Harame, D. ; Scilla, G. ; Sai-Halasz, G.A.
Pub. info.: Processing and characterization of materials using ion beams : symposium held November 28-December 2, 1988, Boston, Massachusetts, U.S.A..  pp.635-640,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 128
5.

Conference Proceedings
Conference Proceedings
5. EFFECTS OF INDIUM PREAMORPHIZATION ON BORON IMPLANTED SILICON ANNEALED BY RTA
Ganin, E. ; Scilla, G. ; Sedgwick, T.O. ; Sai?Halasz, G.A.
Pub. info.: Beam-solid interactions and transient processes : symposium held December 1-4, 1986, Boston, Massachusetts, U.S.A..  pp.717-730,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 74
6.

Conference Proceedings
Conference Proceedings
6. HEAVY PHOSPHOROUS DOPING OF EPITAXIAL SILICON AT LOW TEMPERATURE AND ATMOSPHERIC PRESSURE
Sedgwick, T. O. ; Agnello, P. D. ; Nguyen-Ngoc, D. ; Kuan, T. S. ; Scilla, G.
Pub. info.: Rapid thermal and integrated processing : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A..  pp.493-498,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 224
7.

Conference Proceedings
Conference Proceedings
7. DOPANT DIFFUSION IN TiSi2
d'Heurle, F.M. ; Michel, A.E. ; LeGoues, F.K. ; Scilla, G. ; Wetzel, J.T. ; Gas, P.
Pub. info.: Interfaces, superlattices, and thin films : symposium held December 1-6, 1986, Boston, Massachusetts, U.S.A..  pp.333-338,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 77