1.

Conference Proceedings
Conference Proceedings
1. Photohlminesceuce vibrational spectroscopy of defeets containing the light impurities carbon and oxygen in silicon
Lightowiers,E.C. ; Safonov,A.N.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.617-622,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
2.

Conference Proceedings
Conference Proceedings
2. Carbon-Hydrogen Deep Level Luminescence Centre in Silicon Responsible for the T-Line
Safonov,A.N. ; Lightowlers,E.C. ; Davies,G.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.909-914,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
3.

Conference Proceedings
Conference Proceedings
3. Hydrogen Related Optical Centers in Radiation Damaged Silicon
Safonov,A.N. ; Lightowlers,E.C.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.2  pp.903-908,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
4.

Conference Proceedings
Conference Proceedings
4. The M-line(760.8 meV)luminesceuce system associated with the carbon-hydrogen aeceptor centre in silicon
Safonov,A.N. ; Lightowlers,E.C.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.259-264,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
5.

Conference Proceedings
Conference Proceedings
5. Carbon Induced Inhomogeneous Strain Splitung of the Phosphorus Bound Exciton Line in Silicon
Safonov,A.N. ; Lightowlers,E.C. ; Davies,G.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.133-138,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201