1.

Conference Proceedings
Conference Proceedings
1. AlGaN/GaN HEMTs Fabricated on Selectively Grown Mesas on Si(111)
J. Bardwell ; S. Haffouz ; H. Tang ; A. Kochtane ; T. Lester
Pub. info.: State-of-the-art program on compound semiconductors 47 (SOTAPOCS 47) and wide-bandgap semiconductor materials and devices 8.  pp.271-276,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(5)
2.

Conference Proceedings
Conference Proceedings
2. X-Ray and Electrical Characterization of Optimized Ti/Al/Ti/Au Ohmic Contacts for AlGaN/GaN HEMTs
J. A. Bardwell ; S. Haffouz ; H. Tang ; R. Wang
Pub. info.: State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI.  pp.266-273,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(2)
3.

Conference Proceedings
Conference Proceedings
3. The Effect of Surface Cleaning on Current Collapse in AlGaN/GaN HEMTs
J. Bardwell ; S. Haffouz ; R. McKinnon ; C. Storey ; H. Tang ; G. Sproule ; D. Roth ; R. Wang
Pub. info.: State-of-the-art program on compound semiconductors 45 (SOTAPOCS 45) and wide bandgap semiconductor materials and devices 7.  pp.373-380,  2006.  Pennington, N.J.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(5)