1.

Conference Proceedings
Conference Proceedings
1. *X-RAY DIFFRACTION FROM BURIED GaAs/GaSb INTERFACES
Bourret, Alain ; Fuoss, P.H. ; Rocher, A. ; Raisin, C.
Pub. info.: Advances in surface and thin film diffraction : symposium held November 27-29, 1990, Boston, Massachusetts, U.S.A..  pp.303-308,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 208
2.

Conference Proceedings
Conference Proceedings
2. Direct Wafer Bonding of Preamorphized Silicon Wafers
Laporte, A. ; Sarrabayrouse, G. ; Benamara, M. ; Claverie, A. ; Rocher, A. ; Lescouzeres, L. ; PeyreLavigne, A.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.869-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378
3.

Conference Proceedings
Conference Proceedings
3. Atomic Structure of the Interfaces Between Silicon Directly Bonded Wafers
Benamara, M. ; Rocher, A. ; Laporte, A. ; Sarrabayrouse, G. ; Lescouzeres, L. ; PeyreLavigne, A. ; Fnaiech, M. ; Claverie, A.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.863-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378
4.

Conference Proceedings
Conference Proceedings
4. OBSERVATION OF GaAs/Si INTERFACE BY TEM: EFFECT OF ANNEALING ON THE STRUCTURE
Heral, H. ; Rocher, A. ; Charasse, M. N. ; Georgakilas, A. ; Chazelas, J. ; Hirtz, J. P. ; Blanck, H. ; Siejka, J.
Pub. info.: Epitaxy of semiconductor layered structures : symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A..  pp.51-56,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 102
5.

Conference Proceedings
Conference Proceedings
5. Use of the Curvature Method to Determine the Misfit Stress of Epitaxial Semiconducting Systems: The Case of Samples Thinned for TEM Observation
Ponchet, A. ; Cabie, M. ; Durand, L. ; Rivoal, M. ; Rocher, A.
Pub. info.: Thin films : stresses and mechanical properties X : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A..  pp.21-28,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 795
6.

Conference Proceedings
Conference Proceedings
6. Misoriention-Induced Defects at Bonded Si-Si Bonding Interfaces: Structural and Electrical Investigations
Laprote, A. ; Sarrabayrouse, G. ; Rocher, A. ; Lescouzeres, L. ; PeyreLavigne, A. ; Claverie, A.
Pub. info.: Proceedings of the Third International Symposium on Semiconductor Wafer Bonding : physics and applications.  pp.342-352,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-7