1.

Conference Proceedings
Conference Proceedings
1. High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications
Hull, B.A. ; Das, M.K. ; Richmond, J.T. ; Heath, B. ; Sumakeris, J.J. ; Geil, B.R. ; Scozzie, C.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1355-1358,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs
Ryu, S.H. ; Krishnaswami, S. ; Hull, B.A. ; Heath, B. ; Das, M.K. ; Richmond, J.T. ; Agarwal, A.K. ; Palmour, J.W. ; Scofield, J.D.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1261-1264,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC
Ryu, S.-H. ; Agarwal, A. ; Richmond, J.T. ; Das, M.K. ; Lipkin, L.A. ; Palmour, J. ; Saks, N. ; Williams, J.R.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1195-1198,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. High-Temperature Performance of 10 Kilovolts, 200 Amperes (Pulsed) 4H-SiC PiN Rectifiers
Singh, R. ; Irvine, K.G. ; Richmond, J.T. ; Palmour, J.W.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1265-1268,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC
Ryu, S.-H. ; Agarwal, A. ; Richmond, J.T. ; Das, Mrinal K. ; Lipkin, L.A. ; Palmour, J.W. ; Saks, N. ; Williams, J.R.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1195-1198,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. High-Temperature Performance of 10 Kilovolts, 200 Amperes (Pulsed) 4H-SiC PiN Rectifiers
Singh, R. ; Irvine, K.G. ; Richmond, J.T. ; Palmour, J.W.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1265-1268,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393