1.

Conference Proceedings
Conference Proceedings
1. Effect of phase error on 180-nm and 250-nm grouped-line KrF lithography using an alternating phase-shift mask
Petersen,J.S. ; Williams,A.M. ; Rich,G.K. ; Miller,D.A. ; Martinez,A.M.,Jr.
Pub. info.: Photomask and X-ray mask technology IV : 17-18 April, 1997, Kawasaki, Japan.  pp.375-382,  1997.  Bellingham, Washington.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3096
2.

Conference Proceedings
Conference Proceedings
2. 193-nm photoresists at 130-nm node:which lithographic performances for which chemical platform?
Amblard,G.R. ; Byers,J.D. ; Domke,W.D. ; Rich,G.K. ; Graffenberg,V.L. ; Patel,S. ; Miller,D.A. ; Perez,G.B.
Pub. info.: Advances in resist technology and processing XVII : 28 February - 1 March 2000, Santa Clara, USA.  Part1  pp.32-53,  2000.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3999
3.

Conference Proceedings
Conference Proceedings
3. Optimization of etch conditions for a silicon-containing methacrylate-based bilayer resist for 193-nm lithography
Steinhausler,T. ; Gabor,A.H. ; White,D. ; Blakeney,A.J. ; Stark,D.R. ; Miller,D.A. ; Rich,G.K. ; Graffenberg,V.L. ; Dean,K.R.
Pub. info.: Advances in resist technology and processing XV : 23-25 February 1998, Santa Clara, California.  Part 1  pp.122-131,  1998.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3333
4.

Conference Proceedings
Conference Proceedings
4. Reactive ion etching of 193-nm resist candidates: current platforms and future requirements
Wallow,T.I. ; Brock,P.J. ; DiPietro,R.A. ; Allen,R.D. ; Opitz,J. ; Sooriyakumaran,R. ; Hofer,D.C. ; Meute,J. ; Byers,J.D. ; Rich,G.K. ; McCallum,M. ; Schuetze,S. ; Jayaraman,S. ; Hullihen,K. ; Vicari,R. ; Rhodes,L.F. ; Goodall,B.L. ; Shick,R.A.
Pub. info.: Advances in resist technology and processing XV : 23-25 February 1998, Santa Clara, California.  Part 1  pp.92-101,  1998.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3333
5.

Conference Proceedings
Conference Proceedings
5. 193-nm thin-layer imaging performance of 140-nm contact hole patterning and DOE dry development process optimization of multilayer resist process
Kim,W.D. ; Hwang,S.B. ; Rich,G.K. ; Graffenberg,V.L.
Pub. info.: Advances in resist technology and processing XVII : 28 February - 1 March 2000, Santa Clara, USA.  Part2  pp.1028-1045,  2000.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3999
6.

Conference Proceedings
Conference Proceedings
6. Pattern collapse in high-aspect-ratio DUV and 193-nm resists
Domke,W.D. ; Graffenberg,V.L. ; Patel,S. ; Rich,G.K. ; Cao,H.B. ; Nealey,P.F.
Pub. info.: Advances in resist technology and processing XVII : 28 February - 1 March 2000, Santa Clara, USA.  Part1  pp.313-321,  2000.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3999
7.

Conference Proceedings
Conference Proceedings
7. Photoresist outgassing at 157-nm exposure
Hien,S. ; Angood,S. ; Ashworth,D. ; Basset,S. ; Bloomstein,T.M. ; Dean,K.R. ; Kunz,R.R. ; Miller,D.A. ; Patel,S. ; Rich,G.K.
Pub. info.: Advances in Resist Technology and Processing XVIII.  4345  pp.439-447,  2001.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4345