1.

Conference Proceedings
Conference Proceedings
1. Microscopic Difference between Dry and Wet Oxidations of C-Face 4H-SiC MOSFFETs Studied by Electrically Detected Magnetic Resonance
Y. Kagoyama ; M. Okamoto ; S. Harada ; R. Arai ; T. Umeda
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.619-622,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
2.

Conference Proceedings
Conference Proceedings
2. Relationship between C-Face Defects and Threshold-Voltage Instability in C-Face 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance
G.W. Kim ; R. Arai ; S.J. Ma ; M. Okamoto ; H. Yoshioka
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.591-594,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
3.

Conference Proceedings
Conference Proceedings
3. C-Face Interface Defects in 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance
T. Umeda ; M. Okamoto ; R. Arai ; Y. Satoh ; R. Kosugi
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.414-417,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780