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Conference Proceedings

1. Cantilever Epitaxy: A Simple Lateral Growth Technique for Reducing Dislocation Densities in GaN and Other Nitrides

Ashby, C.I.H. ; Willan, C.C. ; Han, J. ; Missert, N.A. ; Provencio, P.P. ; Follstaedt, D.M. ; Peake, G.M. ; Griego, L.

Pub. info.:	High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium. pp.132-139, 2000. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-18

Conference Proceedings

2. Absorbance and Photoluminescence of Nanoparticles of Si, Ge, and MOS2 Studied by Liquid Chromatography

Wilcoxon, J.P. ; Samara, G.A. ; Provencio, P.P.

Pub. info.:	Advanced luminescent materials and quantum confinement : proceedings of the international symposium. pp.225-239, 1999. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-22

Conference Proceedings

3. Cantilever Epitaxy of GaN on Sapphire: Further Reductions in Dislocation Density

Follstaedt, D.M. ; Provencio, P.P. ; Koleske, D.D. ; Mitchell, C.C. ; Allerman, A.A. ; Missert, N.A. ; Ashby, C.I.H.

Pub. info.:	GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A.. pp.15-20, 2002. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	743

Conference Proceedings

4. Characterization of Dark-Block Defects in Cantilever Epitaxial GaN on Sapphire

Provencio, P.P. ; Follstaedt, D.M. ; Missert, N.A. ; Koleske, D.D. ; Mitchell, C.C. ; Allerman, A.A. ; Ashby, C.I.H.

Pub. info.:	GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A.. pp.115-120, 2002. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	743