1.

Conference Proceedings
Conference Proceedings
1. HYDROGEN PASSIVATED CARBON ACCEPTORS IN GaAs AND AlAa: NO EVIDENCE FOR CARBON DONORS
Davidson, B. R. ; Newman, R. C. ; Pritchard, R. E. ; Bullough, T. J. ; Joyce, T. B. ; Jones, R. ; Oberg, S.
Pub. info.: Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A..  pp.241-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 325
2.

Conference Proceedings
Conference Proceedings
2. Native Defects in Low Temperature GaAs and the Effect of Hydrogenation
Pritchard, R. E. ; McQuaid, S. A. ; Newman, R. C. ; Makinen, J. ; Bardeleben, H. J. von ; Missous, M.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.441-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378
3.

Conference Proceedings
Conference Proceedings
3. Determination of the Bonding Configurations of Carbon Acceptors in InxGa1-xAs and AlxGa1-xAs
Pritchard, R. E. ; Newman, R. C. ; Wagner, J. ; Maier, M. ; Mazuelas, A. ; Ploog, K. H. ; Lane, P. A. ; Martin, T.
Pub. info.: Strained layer epitaxy - materials processing and device applications : symposium held April 17-19, 1995, San Francisco, California, U.S.A..  pp.269-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 379