1.

Conference Proceedings
Conference Proceedings
1. COMPARATIVE STUFY OD SIMULATED DAMAGE ACCUMULATION IN SILICON CRYSTALS
Murthy, C.S. ; Posselt, M.
Pub. info.: Proceedings of the Third International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.545-555,  1993.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1993-6
2.

Conference Proceedings
Conference Proceedings
2. A NOVEL METHOD TO INVESTIGATE ION-BEAM-INDUCED DEFFECT EVOLUTION IN SI
Posselt, M.
Pub. info.: Proceedings of the Fifth International Symposium of Process Physics and Modeling in Semiconductor Technology.  pp.58-74,  1999.  Pennington, New Jersey.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-2
3.

Conference Proceedings
Conference Proceedings
3. Dose Rate and Temperature Dependence of Ion-Beam-Induced Defect Evolution in Si and SiC
Posselt, M. ; Bischoff, L. ; Teichert, J. ; Ster, A.
Pub. info.: Defect and impurity engineered semiconductors and devices III : symposium held April 1-5, 2002, San Francisco, California, U.S.A..  pp.311-318,  2002.  Warrendale, Pa.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 719
4.

Conference Proceedings
Conference Proceedings
4. Ion Beam Analysis and Computer Simulation of Damage Accumulation in Nitrogen Implanted 6H-SiC: Effects of Channeling
Zolnai, Z. ; Ster, A. ; Khanh, N. Q. ; Kotai, E. ; Posselt, M. ; Battistig, G. ; Lohner, T. ; Gyulai, J.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.637-640,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
5.

Conference Proceedings
Conference Proceedings
5. Atomic Computer Simulations of Defect Migration in 3C and 4H-SiC
Gao, F. ; Weber, W.J. ; Posselt, M. ; Belko, V.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.457-460,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
6.

Conference Proceedings
Conference Proceedings
6. Detection of Metastable Defective Regions in Ion-Implanted Silicon by Means of Metal Gettering
Kogler, R. ; Posselt, M. ; Yankov, R. A. ; Kaschny, J. R. ; Werner, P. ; Danilin, A. B. ; Skorupa, W.
Pub. info.: Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.463-,  1997.  Pittsburg, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 469
7.

Conference Proceedings
Conference Proceedings
7. Modeling of Damage Accumulation During Ion Implantation into Single-Crystalline Silicon
Posselt, M. ; Schmidt, B. ; Murthy, C.S. ; Feudel, T.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.453-467,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-4