1.

Conference Proceedings
Conference Proceedings
1. THE EFFECT OF THE INITIAL NUCLEATION TEMPERATURE ON THE MISFIT DISLOCATION STRUCTURE OF InP-0ON-GaAs HETEROSTRUCTURES
Riesz, Ferenc ; Radnoczi, G. ; Pecz, B. ; Rakennus, K. ; Hakkaralnen, T. ; Pesek, A. ; Lischka, K.
Pub. info.: Mechanisms of Heteroepitaxial growth : symposium held April 27-30, 1992, San Francisco, California, U.S.A..  pp.461-466,  1992.  Pittsburgh, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 263
2.

Conference Proceedings
Conference Proceedings
2. THE EFFECT OF Xe ION BEAM TREATMENT ON THE INTERACTION BETWEEN GOLD AND GaAs
Pearton, S. J. ; Pecz, B. ; Radnoczi, G. ; Jorvath, Zs. J. ; Barna, P. B. ; Jaroli, Erika ; Gyulai, J.
Pub. info.: Advanced metallization and processing for semiconductor devices and circuits--II : symposium held April 27-May 1, 1992, San Francisco, California, U.S.A..  pp.293-298,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 260
3.

Conference Proceedings
Conference Proceedings
3. THERMAL BEHAVIOUR OF Au/Pd/GaAs CONTACTS
Pecz, B. ; Veresegyhazy, R. ; Mojzes, I. ; Radnoczi, G. ; Sulyok, A. ; Malina, V.
Pub. info.: Advanced metallizations in microelectronics : symposium held April 16-20, 1990, San Francisco, California, U.S.A..  pp.319-324,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 181
4.

Conference Proceedings
Conference Proceedings
4. THERMAL BEHAVIOR OF Au/Pd/GaAs CONTACTS
Pecz, B. ; Veresegyhazy, R. ; Mojzes, I. ; Radnoczi, G. ; Sulyok, A. ; Malina, V.
Pub. info.: Degradation mechanisms in III-V compound semiconductor devices and structures : symposium held April 17-18, 1990, San Francisco, California, U.S.A..  pp.255-260,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 184
5.

Conference Proceedings
Conference Proceedings
5. TEM Investigation of Si Implanted Natural Diamond
Pecz, B. ; Barna, A. ; Heera, V. ; Fontaine, F. ; Skorupa, W.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.199-204,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
6.

Conference Proceedings
Conference Proceedings
6. Consequences of High-Dose, High Temperature Al+ Implantation in 6H-SiC
Stoemenos, J. ; Pecz, B. ; Heera, V.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.881-884,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
7.

Conference Proceedings
Conference Proceedings
7. Formation of Precipitates in 6H-SiC after Oxygen Implantation and Subsequent Annealing
Pecz, B. ; Klettke, O. ; Pensl, G. ; Stoemenos, J.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.961-964,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
8.

Conference Proceedings
Conference Proceedings
8. High Dose Implantation in 6H-SiC
Heera, V. ; Skorupa, W. ; Stoemenos, J. ; Pecz, B.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.579-582,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
9.

Conference Proceedings
Conference Proceedings
9. Microstructure of GaN Layers Grown onto (001) and (111) GaAs Substrates by Molecular Beam Epitaxy
Toth, L. ; Pecz, B. ; Czigany, Zs. ; Amimer, K. ; Georgakilas, A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.999-1002,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
10.

Conference Proceedings
Conference Proceedings
10. Void-Free Epitaxial Growth of Cubic SiC Crystallites during CO Heat Treatment of Oxidized Silicon
Krafcsik, O.H. ; Vida, G. ; Josepovits, K.V. ; Deak, P. ; Radnoczi, G.Z. ; Pecz, B. ; Barsony, I.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.359-362,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393