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Conference Proceedings

1. Pattern-density-dependent contrast in commonly used dose-equalization schemes

Peckerar,M.C. ; Marrian,C.R.K.

Pub. info.:	Electron-beam, X-ray, EUV, and ion-beam submicrometer lithographies for manufacturing VI : 11-13 March 1996, Santa Clara, California. pp.134-142, 1996. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2723

Conference Proceedings

2. Position measurement of high-energy e-beams for pattern placement improvement

Perkins,F.K. ; McCarthy,D. ; Marrian,C.R.K. ; Peckerar,M.C.

Pub. info.:	Electron-beam, X-ray, EUV, and ion-beam submicrometer lithographies for manufacturing VI : 11-13 March 1996, Santa Clara, California. pp.91-101, 1996. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2723

Conference Proceedings

3. Proximity correction for e-beam lithography

Marrian,C.R. ; Chang,S. ; Peckerar,M.C.

Pub. info.:	15th Annual BACUS Symposium on Photomask Technology and Management. pp.2-13, 1995. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2621

Conference Proceedings

4. Improved pattern placement in membrane mask making

Perkins,F.K. ; Marrian,C.R.K. ; Peckerar,M.C.

Pub. info.:	16th Annual BACUS Symposium on Photomask Technology and Management. pp.344-352, 1996. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2884