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Conference Proceedings

1. 1/f noise and ballistic mobility in GaN/AlGaN heterostructure field effect transistors in high magnetic fields

Rumyantsev, S. L. ; Shur, M. S. ; Knap, W. ; Dyakonova, N. ; Pascal, F. ; Hoffman, A. ; Ghuel, Y. ; Gaquiere, C. ; Theron, D.

Pub. info.:	Noise in devices and circuits II : 26-28 May 2004, Maspalomas, Gran Canaria, Spain. pp.277-285, 2004. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5470

Conference Proceedings

2. Influence of the emitter-base junction depth on the low-frequency noise of Si/SiGeC heterojunction bipolar transistors

Benoit, P. ; Chay, C. ; Delseny, C. ; Pascal, F. ; Llinares, P. ; Vildeuil, J.-C. ; Baudry, H.

Pub. info.:	Noise in devices and circuits II : 26-28 May 2004, Maspalomas, Gran Canaria, Spain. pp.242-250, 2004. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5470

Conference Proceedings

3. Comparison of low-frequency noise in III-V and Si/SiGe HBTs (Invited Paper)

Pascal, F. ; Guenard-Jarrix, S. ; Delseny, C. ; Penarier, A. ; Chay, C. ; Deen, M.J.

Pub. info.:	Noise in Devices and Circuits. pp.133-146, 2003. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5113

Conference Proceedings

4. Low-frequency noise behavior of polysilicon emitter bipolar junction transistors: a review (Keynote Address)

Deen, M.J. ; Pascal, F.

Pub. info.:	Noise in Devices and Circuits. pp.1-15, 2003. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5113