1.

Conference Proceedings
Conference Proceedings
1. Nauosecond Risetime Pulse Characterization of SiC p+n Junction Diode Breakdown and Switching Properties
Neudeck,P.G. ; Fazi,C.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1037-1040,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
2.

Conference Proceedings
Conference Proceedings
2. SiC-Based Schottky Diode Gas Sensors
Hunter,G.W. ; Neudeck,P.G. ; Chen,L.-Y. ; Knight,D. ; Li,C.C. ; Wu,Q.H.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1093-1096,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
3.

Conference Proceedings
Conference Proceedings
3. Wide Dynamic Range RF Mixers Using Wide-Bandgap Semiconductors
Fazi,C. ; Neudeck,P.G.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.913-916,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268