1.

Conference Proceedings
Conference Proceedings
1. Shallow excited states of the 1014 meV Cu related optical center in Si
Nazare,M.H. ; Duarte,A.J. ; Steele,A.G. ; Davies,G. ; Light-owlers,E.C.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.1  pp.191-196,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87
2.

Conference Proceedings
Conference Proceedings
2. Photoluminescence Measurements of a Beryllium-Related Deep Center in Silicon
Campion,J.D. ; McGuigan,K.G. ; Henry,M.O. ; Nazare,M.H.
Pub. info.: Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992.  pp.177-182,  1993.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 117-118
3.

Conference Proceedings
Conference Proceedings
3. Oxygen Complexing with Group II Impurities in Silicon
Daly,S.E. ; McGlynn,E. ; Henry,M.O. ; Campion,J.D. ; McGuigan,K.G. ; DoCarmo,M.C. ; Nazare,M.H.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1303-1308,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
4.

Conference Proceedings
Conference Proceedings
4. Photoreflectance,Reflectivity and Photoluminescence of MOVPE Grown ZnSe/GaAs Epilayers and ZnSeS/ZnSe Superlattices
Boemare,C. ; Nazare,M.H. ; Taudt,W. ; Sollner,J. ; Heuken,M.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.567-572,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
5.

Conference Proceedings
Conference Proceedings
5. The Bound Exciton Model for Isoelectronic Centers in Silicon
Davies,G. ; Nazare,M.H.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.105-110,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
6.

Conference Proceedings
Conference Proceedings
6. Nickel and Nitrogen(?)Related Defects in High Pressure Synthetic Diamond
Nazare,M.H. ; Rino,L.M. ; Kanda,H.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.73-78,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
7.

Conference Proceedings
Conference Proceedings
7. Photoluminescence Study of Nickel Doped Silicon
Nazare,M.H. ; Thomaz,M.F.
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part1  pp.433-438,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41