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31 results

Conference Proceedings

1. Characterization of SiC Crystals by Using Deep UV Excitatiotl Raman Spectroscopy

Nakashima, S. ; Mitani, T.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.333-338, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. Raman Scattering Analyses of Stacking Faults in 3C-SiC Crystals

Mitani, T. ; Nakashima, S. ; Okumura, H. ; Nagasawa, H.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.343-346, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

3. Strueiures of Comets in a Homoepitaxially Grown 4H-SiC Film Studied by DUV Micro-Raman Spectroscopy

Tomita, T. ; Matsuo, S. ; Okada, T. ; Kimoto, T. ; Mitani, T. ; Nakashima, S.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.339-342, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

4. *FORMATION OF BURIED OXIDE IN SILICON BY HIGH-DOSE OXYGEN IMPLANTATION, AND APPLICATION OF THIS TECHNOLOGY TO CMOS DEVICES

Izumi, K. ; Omura, Y. ; Nakashima, S.

Pub. info.:	Energy beam-solid interactions and transient thermal processing : symposium held November 1983 in Boston, Massachusetts, U.S.A.. pp.443-452, 1984. New York. North-Holland
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	23

Conference Proceedings

5. A Study of the Intermediate of Catechol Dioxygenase Model Reaction by Co(III) Tetramine Complexes and Catechols

Nakashima, S. ; Ohya-Nishiguchi, H. ; Hirota, N. ; Tsuboyama, S. ; Chijimatsu, T.

Pub. info.:	Dioxygen activation and homogeneous catalytic oxidation : proceedings of the Fourth International Symposium on Dioxygen Activation and Homogeneous Catalytic Oxidation. pp.347-, 1991. Amsterdam. Elsevier
Title of ser.:	Studies in surface science and catalysis
Ser. no.:	66

Conference Proceedings

6. Effects of Sputtered Ir and IrO2 Electrodes on the Properties of PZT Thin Films Deposited by MOCVD

Shimizu, M. ; Fujisawa, H. ; Hyodo, S. ; Nakashima, S. ; Niu, H. ; Okino, H. ; Shiosaki, T.

Pub. info.:	Ferroelectric thin films VI : symposium held November 30-December 4, 1997, Boston, Massachusetts, U.S.A.. pp.159-, 1998. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	493

Conference Proceedings

7. Sensitive Detection of Defects in α and β SiC by Raman Scattering

Nakashima, S. ; Nakatake, Y. ; Ishida, Y. ; Takahashi, T. ; Okumura, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.629-632, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

8. Raman Microprobe Study of Carrier Density Profiles in Modulation-Doped 6H SiC

Nakashima, S. ; Nakatake, Y. ; Yano, Y. ; Harima, H. ; Ohtani, N. ; Katsuno, M.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.633-636, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

9. A Raman Study of Metal-SiC Interface Reactions

Kurimoto, E. ; Harima, H. ; Toda, T. ; Sawada, M. ; Nakashima, S. ; Iwami, M.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.637-640, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. Ultrafast Electron Relaxation Processes in SiC

Tomita, T. ; Saito, S. ; Suemoto, T. ; Harima, H. ; Nakashima, S.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.641-646, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

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Author: Nakashima, S.