1.

Conference Proceedings
Conference Proceedings
1. INVITED: TUNNEL CURRENT AND WEAROUT PHENOMENA IN SUB-5 nm GATE OXIDES
Hirose, M. ; Mizubayashi, W. ; Fukuda, M. ; Miyazaki, S.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.730-744,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(1)
2.

Conference Proceedings
Conference Proceedings
2. Organic Contamination of Silicon Wafer in Clean Room Air and Its Impact to Gate Oxide Integrity
Imafuku, D. ; Mizubayashi, W. ; Miyazaki, S. ; Hirose, M. ; Wakayama, Y. ; Kobayashi, S.
Pub. info.: Science and technology of semiconductor surface preparation : symposium held April 1-3, 1997, San Francisco, California, U.S.A..  pp.101-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 477
3.

Conference Proceedings
Conference Proceedings
3. Low-Frequency Noise Characterization in HfAlO x/SiO2 n-MOSFETs
Horikawa, T. ; Yasuda, N. ; Mizubayashi, W. ; Iwamoto, K. ; Tominaga, K. ; Akiyama, K. ; Yamamoto, K. ; Hisamatsu, H. ; Ota, H. ; Nabatame, T. ; Toriumi, A.
Pub. info.: Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium.  pp.292-303,  2004.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-01
4.

Conference Proceedings
Conference Proceedings
4. Organic Contamination of Silicon Wafer in Clean Room Air and Its Impact to Gate Oxide Integrity
Imafuku, D. ; Mizubayashi, W. ; Miyazaki, S. ; Hirose, M. ; Wakayama, Y. ; Kobayashi, S.
Pub. info.: Materials reliability in microelectronics VII : symposium held April 8-12, 1997, San Francisco, California, U.S.A..  pp.161-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 473
5.

Conference Proceedings
Conference Proceedings
5. Soft Breakdown Mechanism in Ultrathin Gate Oxides
Mizubayashi, W. ; Itokawa, H. ; Miyazaki, S. ; Hirose, M.
Pub. info.: The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000.  pp.409-418,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-2