1.

Conference Proceedings
Conference Proceedings
1. Evaluation of Optical Properties for Nanocrystal Si Dot Layers Fabricated by CVD as a Function of Size Reduction
Y. Mizukami ; D. Kosemura ; M. Takei ; Y. Numasawa ; Y. Ohshita
Pub. info.: Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan.  pp.251-254,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 725
2.

Conference Proceedings
Conference Proceedings
2. Evaluation and Control of Strain in Si Induced by Patterned SiN Stressor
H. Saitoh ; D. Kosemura ; Y. Kakemura ; T. Yoshida ; M. Takei
Pub. info.: Dielectrics for nanosystems 3: materials science, processing, reliability, and manufacturing.  pp.263-269,  2008.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 13(2)
3.

Conference Proceedings
Conference Proceedings
3. Reliability Improvement and Optimization of Trench Orientation of 4H-SiC Trench-Gate Oxide
T. Kojima ; S. Harada ; K. Ariyoshi ; J. Senzaki ; M. Takei
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.537-540,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
4.

Conference Proceedings
Conference Proceedings
4. Ultrahigh-Temperature Oxidation of 4H-SiC(0001) and an Impact of Cooling Process on SiO2/SiC Interface Properties
T. Hosoi ; D. Nagai ; M. Sometani ; T. Shimura ; M. Takei ; H. Watanabe
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.323-326,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897