1.

Conference Proceedings
Conference Proceedings
1. 16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications
L. Cheng ; A.K. Agarwal ; M. O'Loughlin ; C. Capell ; K. Lam
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.895-898,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
2.

Conference Proceedings
Conference Proceedings
2. 15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors
L. Cheng ; A.K. Agarwal ; C. Capell ; M. O'Loughlin ; K. Lam
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.978-981,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
3.

Conference Proceedings
Conference Proceedings
3. 15 kV IGBTs in 4H-SiC
S.H. Ryu ; C. Capell ; C. Jonas ; M. O'Loughlin ; L. Cheng
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.954-957,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
4.

Conference Proceedings
Conference Proceedings
4. Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices
M. O'Loughlin ; A. Burk Jr. ; D. Tsvetkov ; S. Ustin ; J.W. Palmour
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.167-172,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
5.

Conference Proceedings
Conference Proceedings
5. An Analysis of Forward Conduction Characteristics of Ultra High Voltage 4H-SiC NIGBTs
S.H. Ryu ; C. Capelll ; C. Jonas ; M. O'Loughlin ; J. Clayton
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.945-948,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
6.

Conference Proceedings
Conference Proceedings
6. Defects Limiting Minorty Carrier Lifetime in 4H-SiC Epilayers
P. B. Klein ; B. Shanabrook ; S. Huh ; A. Polyakov ; M. Skowronski ; J. Sumakeris ; M. O'Loughlin
Pub. info.: State-of-the-art program on compound semiconductors 45 (SOTAPOCS 45) and wide bandgap semiconductor materials and devices 7.  pp.19-28,  2006.  Pennington, N.J.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(5)