1.

Conference Proceedings
Conference Proceedings
1. 600 V -Class V-Groove SiC MOSFETs
Y. Saitoh ; M. Furumai ; T. Hiyoshi ; K. Wada ; T. Masuda
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.931-934,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
2.

Conference Proceedings
Conference Proceedings
2. Demonstration of 13-kV Class Junction Barrier Schottky Diodes in 4H-SiC with Three- Zone Junction Termination Extension
H. Kitai ; Y. Hozumi ; H. Shiomi ; M. Furumai ; K. Omote ; K. Fukuda
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.451-454,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897