1.

Conference Proceedings
Conference Proceedings
1. Evidence for High Vacancy Concentrations in Heavily Doped n-Type Silicon from Mossbauer Experiments
Weyer,G. ; Fanciulli,M. ; Freitag,K. ; Larsen,A.Nylandsted ; Lindroos,M. ; Muller,E. ; Vestergaard,H.C.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1117-1122,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
2.

Conference Proceedings
Conference Proceedings
2. ll9Sn Mossbauer Study of Ion Implanted GaN
Fanciulli,M. ; Lindroos,M. ; Weyer,G. ; Moustakas,T.D.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.61-66,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201