1.

Conference Proceedings
Conference Proceedings
1. Lattice Location of Ion Implanted Dopants in GaAs Using Radioactive Probes
Winter,S. ; Biasser,S. ; Hofsass,H. ; Jahn,S. ; Lindner,G. ; Recknagel,E.
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part3  pp.1221-1226,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41
2.

Conference Proceedings
Conference Proceedings
2. On the Formation of Highly Symmetric Impurity-Vacancy Clusters in Ion-Implanted FCC Metals
Lindner,G. ; Weyer,G.
Pub. info.: Vacancies and interstitials in metals and alloys : Proceedings of the International Conference on Vacancies and Interstitials in Metals and Alloys held in Berlin, Germany, September 14-19, 1986.  Pt.2  pp.569-574,  1987.  Aederlmannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 15-18
3.

Conference Proceedings
Conference Proceedings
3. Electron-Positron-Channeling and Mossbauer-Effect Studies of Indium-Vacancy Complexes in Ion-Implanted Nickel
Besold,B. ; Danielsen,E. ; Hofsass,H. ; Lindner,G. ; Petersen,J.W. ; Recknagel,E. ; Sondergaard,M. ; Weyer,G. ; Winter,S.
Pub. info.: Vacancies and interstitials in metals and alloys : Proceedings of the International Conference on Vacancies and Interstitials in Metals and Alloys held in Berlin, Germany, September 14-19, 1986.  Pt.2  pp.665-668,  1987.  Aederlmannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 15-18