1.

Conference Proceedings
Conference Proceedings
1. X-RAY DIFFRACTION STUDIES OF LOW TEMPERATURE GaAs
Kowalski, G. ; Leszczynski, M. ; Kurpiewski, A. ; Kaminska, M. ; Suski, T. ; Weber, E.R.
Pub. info.: Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A..  pp.125-130,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 241
2.

Conference Proceedings
Conference Proceedings
2. Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate
Dworzak, Matthias ; Stempel, Thomas ; Hoffmann, Axel ; Franssen, Gijs ; Grzanka, S. ; Suski, Tadeusz ; Czenecki, R. ; Leszczynski, M. ; Grzegory, I.
Pub. info.: GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A..  pp.825-830,  2006.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 892
3.

Conference Proceedings
Conference Proceedings
3. GaN Crystals Grown in the Increased Volume High-Pressure Reactors
Porowski, S. ; Bockowski, M. ; Lucznik, B. ; Wroblewski, M. ; krukowski, S. ; Grzegory, I. ; Leszczynski, M. ; Nowak, G. ; Pakula, K. ; Baranowski, J.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.35-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
4.

Conference Proceedings
Conference Proceedings
4. GaN Crystals: Growth and Doping Under Pressure
Grzegory, I. ; Bockowski, M. ; Lucznik, B. ; Wroblewski, M. ; Krukowski, S. ; Weyher, J. ; Nowak, G. ; Suski, T. ; Leszczynski, M. ; Teisseyre, H. ; Litwin-Staszewska, E. ; Porowski, S.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.15-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
5.

Conference Proceedings
Conference Proceedings
5. Observation of Native Ga Vacancies in GaN by Positron Annihilation
Saarinen, K. ; Laine, T. ; Kuisma, S. ; Nissila, J. ; Hautojarvi, P. ; Dobrzynski, L. ; Baranowski, J. M. ; Pakula, K. ; Stepniewski, R. ; Wojdak, M. ; Wysmolek, A. ; Suski, T. ; Leszczynski, M. ; Grzegory, I. ; Porowski, S.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.757-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
6.

Conference Proceedings
Conference Proceedings
6. Influence of Free Charge on the Lattice Parameters of GaN and Other Semiconductors
Leszczynski, M. ; Bak-Misiuk, J. ; Domagala, J. ; Suski, T.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.311-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
7.

Conference Proceedings
Conference Proceedings
7. GaN Homoepitaxy for Device Applications
Kamp, M. ; Kirchner, C. ; Schwegler, V. ; Pelzmann, A. ; Ebeling, K. J. ; Leszczynski, M. ; Grzegory, I. ; Suski, T. ; Porowski, S.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G10.2.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
8.

Conference Proceedings
Conference Proceedings
8. Doping, Activation of Impurities, and Defect Annihilation in GaN by High Pressure Annealing
Suski, T. ; Jun, J. ; Leszczynski, M. ; Teisseyre, H. ; Grzegory, I. ; Porowski, S. ; Baranowski, J. M. ; Rocket, A. ; Strite, S. ; Stonert, A. ; Turos, A. ; Tan, H. H. ; Williams, J. S. ; Jagadish, C.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.949-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
9.

Conference Proceedings
Conference Proceedings
9. Light Emitters Fabricated on Bulk GaN Substrates: Challenges and Achievements
Perlin, Piotr ; Leszczynski, M. ; Prystawko, P. ; Czernecki, R. ; Nowak, G. ; Wisniewski, P. ; Dmowski, L. ; Teisseyre, H. ; Litwin-Staszewska, E. ; Suski, T. ; Grzegory, I. ; Porowski, S. ; Ivanov, V.Yu. ; Godlewski, M. ; Holst, J. ; Hoffman, A.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.289-294,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
10.

Conference Proceedings
Conference Proceedings
10. Two-Dimensional Electron Gas Scattering Mechanisms in AlGaN/GaN Heterostructures
Borovitskaya, E. ; Knap, W. ; Shur, M. S. ; Gaska, R. ; Frayssinet, E. ; Lorenzini, P. ; Grandjen, N. ; Baumont, B. ; Massies, J. ; Skierbiszewski, C. ; Prystawko, P. ; Leszczynski, M. ; Grzegory, I. ; Porowski, S.
Pub. info.: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 639