1.

Conference Proceedings
Conference Proceedings
1. ON THE BEHAVIOUR OF HOLE CAPTURE WITH MULTIPHONON EMISSION AT DEEP LEVEL DEFECTS H3 and H4 IN p-GaAs.
MURAWALA,P.A. ; STIEVENARD,D. ; LANNOO,M. ; BOURGOIN,J.C.
Pub. info.: Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986.  Part2  pp.463-468,  1986.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 10-12
2.

Conference Proceedings
Conference Proceedings
2. TIGHT BINDING CULCULATION OF OPTICAL CROSS-SECTION FOR DEEP LEVEL DEFECTS IN SEMICONDUCTORS.
PETIT,J. ; ALLAN,G. ; LANNOO,M.
Pub. info.: Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986.  Part1  pp.67-72,  1986.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 10-12
3.

Conference Proceedings
Conference Proceedings
3. SELF-CONSISTENT TIGHT BINDING THEORY OF TRENDS FOR SUBSTITUTIONAL TRANSITION METAL IONS IN Si AND GaAs.
DELERUE,C. ; ALLAN,G. ; LANNOO,M.
Pub. info.: Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986.  Part1  pp.37-42,  1986.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 10-12