1.

Conference Proceedings
Conference Proceedings
1. DyScHfOx as High-k Gate Dielectrics: Structural and Electrical Properties
C. Adelmann ; S. Van Elshocht ; P. Lehnen ; T. Canard ; A. Franquet ; C. Zhao ; L. Ragnarsson ; V. Chang ; H. Choi ; Y. Hong-Yu ; S. De Gendt
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.113-120,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(1)
2.

Conference Proceedings
Conference Proceedings
2. Impact of Hf-Precursor Choice on Scaling and Performance of High-κ Gate Dielectrics
J. Maes ; Y. Fedorenko ; A. Delabie ; L. Ragnarsson ; J. Swerts
Pub. info.: Physics and technology of high-k gate dielectrics 5.  pp.59-72,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(4)
3.

Conference Proceedings
Conference Proceedings
3. Atomic Layer Deposition of HfO2 on (100) and (110) Oriented Silicon Surfaces
L. Nyns ; L. Ragnarsson ; L. Hall ; A. Delabie ; M. Heyns
Pub. info.: Physics and technology of high-k gate dielectrics 5.  pp.73-77,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(4)
4.

Conference Proceedings
Conference Proceedings
4. Growth Studies and Reaction Mechanism of the Atomic Layer Deposition of Hafnium Oxide
A. Debbie ; M. Caymax ; S. Brijs ; D. Brunco ; T. Conard ; E. Sleeckx ; L. Ragnarsson ; S. Van Elshocht ; S. De Gendt ; M. Heyns
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.433-446,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
5.

Conference Proceedings
Conference Proceedings
5. Metal/High-K Interface Interactions Upon High Temperature Annealing - Are They Cause of Workfunction Changes
T. Conard ; T. Schram ; A. Akheyar ; K. Arstila ; G. Zschaetzsch ; V. Paraschiv ; W. Vandervorst ; B. Brijs ; S. De Gendt ; Z. Jiang ; V. Kaushik ; J. Lenna ; L. Ragnarsson ; D. P. Brunco
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.159-170,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)