1.

Conference Proceedings
Conference Proceedings
1. Gas Source Molecular Beam Epitaxy of High Quality AlGaN on Si and Sapphire
Nikishin, S. ; Kipshidze, G. ; Kuryatkov, V. ; Zubrilov, A. ; Choi, K. ; Gherasoiu, Iu. ; Peralta, L. Grave de ; Prokofyeva, T. ; Holtz, M. ; Asomoza, R. ; Kudryavtsev, Yu. ; Temkin, H.
Pub. info.: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 639
2.

Conference Proceedings
Conference Proceedings
2. Preparation of Optoelectronic Devices Based on AlN/AlGaN Superlattices
Holtz, M. ; Kipshidze, G. ; Chandolu, A. ; Yun, J. ; Borisov, B. ; Kuryatkov, V. ; Zhu, K. ; Chu, S.N.G. ; Nikishin, S.A. ; Temkin, H.
Pub. info.: Progress in semiconductors II : electronic and optoelectronic applications : symposium held December 2-5, 2002, Boston, Massachusetts, U.S.A..  pp.621-626,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 744
3.

Conference Proceedings
Conference Proceedings
3. Deep UV AIGaN light emitting diodes grown by gas source molecular beam epitaxy on sapphire and AIGaN/sapphire substrates (Invited Paper) [6121-29]
Nikishin, S. ; Borisov, B. ; Kuryatkov, V. ; Usikov, A. ; Dmitriev, V. ; Holtz, M.
Pub. info.: Gallium Nitride Materials and Devices.  pp.61210T-,  2006.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6121