1.

Conference Proceedings
Conference Proceedings
1. Investigation of ion-implanted boron in diamond
Bharuth-Ram,K. ; Ittennann,B. ; Metzner,H. ; Fullgrabe,M. ; Heemeier,M. ; Kroll,F. ; Mai,F. ; Matbach,K. ; Meier,P. ; Peters,D. ; Thiess,H. ; Ackermann,H. ; Selischop,J.P.F. ; Stockmann,H.-J. ; Uhrmacher,M.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.763-768,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
2.

Conference Proceedings
Conference Proceedings
2. Donor doping of ZnSe:lattice location aud annealing behaviour of implanted boron
Itterrnann,B. ; Welker,G. ; Kroll,F. ; Mai,F. ; Marbach,K. ; Ackermann,H. ; Stockmann,H.-J. ; Oldckop,E. ; Zeitz,W.-D.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part3  pp.1389-1395,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
3.

Conference Proceedings
Conference Proceedings
3. Determination of the lattice site of nitrogen after implantation into ZnSe
Marbach,K. ; Ittermann,B. ; Fullgrabe,M. ; Heemeier,M. ; Kroll,F. ; Mai,F. ; Meier,P. ; Peters,D. ; H.Thieｦﾂ ; Ackermann,H. ; Stocknann,H.-J. ; Zeitz,W.-D. ; Wenisch,H. ; Hommel,D.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part3  pp.1395-1400,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263