1.

Conference Proceedings
Conference Proceedings
1. Impact of Metallic Impurities on Integrity of Ultra-Thin Gate Oxides and Gettering in Advanced Silicon Wafers*
Koveshnikov, S. ; Beauchaine, D. ; Gonzalez, F.
Pub. info.: ULSI Process Integration : proceedings of the International Symposium.  pp.333-349,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-2
2.

Conference Proceedings
Conference Proceedings
2. Resonance Ultrasonic Diagnostics of As-Grown and Process-Induced Defects in Cz Silicon
Belyaev, A. ; Tarasov, I. ; Ostapenko, S. ; Koveshnikov, S. ; Kochelap, V.A. ; Beyaev, A.E.
Pub. info.: High Purity Silicon VI : proceedings of the sixth International Symposium.  pp.660-669,  2000.  Bellingham, Wash..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-17
3.

Conference Proceedings
Conference Proceedings
3. LOW TEMPERATURE IMPURITY GETTERING FOR GIGA-SCALE INTEGRATED CIRCUIT TECHNOLOGY
Rozgonyi, G.A. ; Koveshnikov, S. ; Agarwal, A.
Pub. info.: Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology.  pp.868-883,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-10
4.

Conference Proceedings
Conference Proceedings
4. 32 Metal Gated Self-aligned Gate-forward nMOSFET with 〓0.8 nm EOT Fabricated by In-Situ Ar/O2 Plasma Oxidation of PVD Hf
Koveshnikov, S. ; Tsai, W. ; Zhang, M. ; Choi, C. ; Lee, J.
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.274-281,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-05
5.

Conference Proceedings
Conference Proceedings
5. Investigation of Electronic States in Copper Doped p-Type Si
Koveshnikov, S. ; Pan, Y. ; Mollenkopf, H.
Pub. info.: Proceedings of the Fourth International Symposium on High Purity Silicon.  pp.473-480,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-13
6.

Conference Proceedings
Conference Proceedings
6. Gettering of Fe, Cu and Ni in MeV Ion Implanted Epitaxial Silicon
Koveshnikov, S. ; Kononchuk, O. ; Beaman, K. ; Rozgonyi, G.A. ; Gonzalez, F.
Pub. info.: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.341-354,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-13
7.

Conference Proceedings
Conference Proceedings
7. Electric Field Effect on Iron-Boron Pair/Interstitial Iron Dissociation/Re-Assodation
Kikuchi, H. ; Agarwai, A. ; Koveshnikov, S. ; Rozgonyi, G.A.
Pub. info.: Proceedings of the Symposium on the Degradation of Electronic Devices due to Device Operation as well as Crystalline and Process-Induced Defects.  pp.298-304,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-1
8.

Conference Proceedings
Conference Proceedings
8. THE INFLUENCE OF AN IN-SITU ELECTRIC FIELD ON H+ AND He+ IMPLANTATION INDUCED DEFECTS IN SILICON
Ravi, J. ; Erokhin, Yu. ; Koveshnikov, S. ; Rozgonyi, G. A. ; White, C. W.
Pub. info.: Materials synthesis and processing using ion beams : symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A..  pp.105-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 316
9.

Conference Proceedings
Conference Proceedings
9. Electrical and Structural Properties of MeV Si+ Ion Implantation in Silicon
Agarwal, Aditya ; Koveshnikov, S. ; Christensen, K. ; Rozgonyi, G. A.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.71-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378
10.

Conference Proceedings
Conference Proceedings
10. Degradation of Gate Oxide Integrity due to Ni and Cu Contamination and Impurity Gettering in Epitaxial Si Wafers
Koveshnikov, S. ; Beauchaine, D. ; Radzimski, Z. ; Higgs, V.
Pub. info.: The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000.  pp.387-398,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-2