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31 results

Conference Proceedings

1. Fabrication of 4H-SiC DIMOSFETs by High-Tempemture (>1400oC) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation Furnace

Kosugi, R. ; Suzuki, K. ; Takao, K. ; Hayashi, Y. ; Yatsuo, T. ; Fukuda, K. ; Ohashi, H. ; Arai, K.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1309-1312, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H2 and H2O Vapor Atmosphere Post-Oxidation Annealing

Fukuda, K. ; Senzaki, J. ; Kushibe, M. ; Kojima, K. ; Kosugi, R. ; Suzuki, S. ; Harada, S. ; Suzuki, T. ; Tanaka, T. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1057-1060, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

3. Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing

Senzaki, J. ; Fukuda, K. ; Kojima, K. ; Harada, S. ; Kosugi, R. ; Suzuki, S. ; Suzuki, T. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1061-1064, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

4. Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing

Senzaki, J. ; Harada, S. ; Kosugi, R. ; Suzuki, S. ; Fukuda, K. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.795-798, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

5. Diluted Nitric Oxide (NO) Annealing of SiO2/4H-SiC in Cold-Wall Oxidation Furnace

Kosugi, R. ; Fukuda, K.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.1345-1348, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

Conference Proceedings

6. Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure

Harada, S. ; Suzuki, S. ; Senzaki, J. ; Kosugi, R. ; Adachi, K. ; Fukuda, K. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1069-1072, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

7. Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface

Hatakeyama, T. ; Harada, S. ; Suzuki, S. ; Senzaki, J. ; Kosugi, R. ; Fukuda, K. ; Shinohe, T. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1081-1084, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

8. ESR Characterization of SiC Bulk Crystals and SiO2/SiC Interface

Isoya, J. ; Kosugi, R. ; Fukuda, K. ; Yamasaki, S.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1025-1028, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

9. A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H2 and H2O Vapor Atmosphere Post-Oxidation Annealing

Fukuda, K. ; Senzaki, J. ; Kushibe, M. ; Kojima, K. ; Kosugi, R. ; Suzuki, S. ; Harada, S. ; Suzuki, T. ; Tanaka, T. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1057-1060, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing

Senzaki, J. ; Fukuda, K. ; Kojima, K. ; Harada, S. ; Kosugi, R. ; Suzuki, S. ; Suzuki, T. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1061-1064, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

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Author: Kosugi, R.