1.

Conference Proceedings
Conference Proceedings
1. Switching Characteristics of SiC-MOSFET and SBD Power Modules
Imaizumi, M. ; Tarui, Y. ; Kinouchi, S. ; Nakatake, H. ; Nakao, Y. ; Watanabe, T. ; Fujihira, K. ; Miura, N. ; Takami, T. ; Ozeki, T.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1289-1292,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Fabrication and Performance of 1.2 kV, 12.9 mΩcm2 4H-SiC Epilayer Channel MOSFET
Tarui, Y. ; Watanabe, T. ; Fujihira, K. ; Miura, N. ; Nakao, Y. ; Imaizumi, M. ; Sumitani, H. ; Takami, T. ; Ozeki, T. ; Oomori, T.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1285-1288,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. TEM Study of Stacking Faults Formed in Pairs in a ZnSe Epitaxial Layer on a GaAs(001) Buffer Layer
Tanimura, J. ; Wada, O. ; Endoh, Y. ; Imaizumi, M. ; Ogama, T.
Pub. info.: Evolution of epitaxial structure and morphology : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.485-,  1996.  Pittsburgh, Pennsylvania.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 399
4.

Conference Proceedings
Conference Proceedings
4. Electron Beam Excited Plasma CVD for Silicon Growth
Okitsu, K. ; Imaizumi, M. ; Ito, T. ; Yamaguchi, K. ; Yamaguchi, M. ; Hara, T. ; Ban, M. ; Tokai, M. ; Kawamura, K.
Pub. info.: Microcrystalline and nanocrystalline semiconductors--1998 : symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A..  pp.539-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 536
5.

Conference Proceedings
Conference Proceedings
5. Direct Correlation of Solar Cell Performance With Metal Impurity Distributions in Polycrystalline Silicon Using Synchrotron-Based X-ray Analysis
McHugo, S. A. ; Thompson, A. C. ; Lamble, G. ; MacDowell, A. ; Celestre, R. ; Padmore, H. ; Imaizumi, M. ; Yamaguchi, M. ; Perichaud, I. ; Martinuzzi, S. ; Werner, M. ; Rinio, M. ; Moller, H. J. ; Sopori, B. ; Hieslmair, H. ; Flink, C. ; Istratov, A. ; Weber, E. R.
Pub. info.: Applications of synchrotron radiation techniques to materials science IV : sympoisum held April 13-17, 1998, San Francisco, California, U.S.A..  pp.297-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 524
6.

Conference Proceedings
Conference Proceedings
6. Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier Diode
Ohtsuka, K. ; Sugimoto, H. ; Kinouchi, S. ; Tarui, Y. ; Imaizumi, M. ; Takami, T. ; Ozeki, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1165-1168,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. Planar p-n Diodes Fabricated by MeV-Energy and High-Temperature Selective Implantation of Aluminum to 4H-SiC
Sugimoto, H. ; Kinouchi, S. ; Tarui, Y. ; Imaizumi, M. ; Ohtsuka, K. ; Takami, T. ; Ozeki, T.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.731-734,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
8.

Conference Proceedings
Conference Proceedings
8. Fabrication and Initial Characterization of 4H-SiC Epilayer Channel MOSFETs
Imaizumi, M. ; Tarui, Y. ; Sugimoto, H. ; Ohtsuka, K. ; Takami, T. ; Ozeki, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1203-1206,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. Impact of Boron and Gallium on Defects Production in Silicon
Khan, Aurangzeb ; Dharmarasu, Nethaji ; Yamaguchi, Masafumi ; Araki, Kenji ; Vu, Tuong K. ; Saga, Tatsuo ; Abe, Takao ; Annzawa, Osamu ; Imaizumi, M. ; Matsuda, Sumio
Pub. info.: Microstructural processes in irradiated materials, 2000 : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 650
10.

Conference Proceedings
Conference Proceedings
10. Effects of N2O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability
Fujihira, K. ; Tarui, Y. ; Ohtsuka, K. I. ; Imaizumi, M. ; Takami, T.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.697-700,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485