1.

Conference Proceedings
Conference Proceedings
1. Electron Microscopy of Ge Si1-x/Si Straine Layer Superlattices
Perovic D. D. ; Weatherly C. G. ; Houghton C. D.
Pub. info.: Evaluation of advanced semiconductor materials by electron microscopy.  pp.355-367,  1989.  New York.  Plenum Press
Title of ser.: NATO ASI series. Series B, Physics
Ser. no.: 203
2.

Conference Proceedings
Conference Proceedings
2. GROWTH AND CHARACTERISATION OF Si/Ge MULTILAYER STRUCTURES ON Si ( 100 )
Baribeau M. J. ; Lockwood L. D. ; Wardana - Dharma C. W. M. ; Aers C. G. ; Houghton C. D.
Pub. info.: Heterostructures on silicon : one step further with silicon.  pp.145-152,  1989.  Dordrecht.  Kluwer Academic Publishers
Title of ser.: NATO ASI series. Series E, Applied sciences
Ser. no.: 160
3.

Conference Proceedings
Conference Proceedings
3. Si-Ge STRAINED LAYER HETEROSTRUCTURES: DEVICE POSSIBILITIES AND PROCESS LIMITATIONS
Houghton C. D. ; Noel -P. J. ; Rowell L. N. ; Perovic D. D.
Pub. info.: Multicomponent and multilayered thin films for advanced microtechnologies : techniques, fundamentals, and devices.  pp.401-444,  1993.  Dordrecht.  Kluwer Academic Publishers
Title of ser.: NATO ASI series. Series E, Applied sciences
Ser. no.: 234
4.

Conference Proceedings
Conference Proceedings
4. Raman Spectroscopy and Otical Properties of Porous Silicon
Lockwood J. D. ; Aers C. G. ; Allard B. L. ; Bryskiewicz B. ; Charbonneau S. ; Houghton C. D. ; Wang A.
Pub. info.: Phonons in semiconductor nanostructures.  pp.383-392,  1993.  Dordrecht.  Kluwer Academic Publishers
Title of ser.: NATO ASI series. Series E, Applied sciences
Ser. no.: 236