1.

Conference Proceedings
Conference Proceedings
1. Initial Growth Stage of AlGaN Grown Directly on (0001) 6H-SiC by MOVPE
Horino, K. ; Kuramata, A. ; Tanahashi, T.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.73-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
2.

Conference Proceedings
Conference Proceedings
2. InGaN Laser Diodes Grown on SiC Substrates Using Low-Pressure Metalorganic Vapor-Phase Epitaxy
Kuramata, A. ; Domen, K. ; Soejima, R. ; Horino, K. ; Kubota, S. ; Tanahashi, T.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.1185-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
3.

Conference Proceedings
Conference Proceedings
3. Valence Band Physics in Wurtzite GaN
Azuhata, T. ; Sota, T. ; Chichibu, S. ; Kuramata, A. ; Horino, K. ; Yamaguchi, M. ; Yagi, T. ; Nakamura, S.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.445-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
4.

Conference Proceedings
Conference Proceedings
4. Properties of GaN Epitaxial Layer Grown by MOVPE on MgAl2O4 Substrate
Kuramata, A. ; Horino, K. ; Domen, K. ; Soejima, R. ; Sudo, H. ; Tanahashi, T.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.61-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395